Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers

Grundmann, Marius

doi:10.1063/1.1336559

Cited by 18 publications

(5 citation statements)

References 14 publications

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“…Thus it goes beyond standard rate equations, [4][5][6][7][8][9][10][11][12] which are similar to those used in quantum well lasers. 13,14 Since our focus here is not on spectrally resolved features like spectral hole burning, inhomogeneous broadening, and intradot relaxation processes, such features as included in other works 11,[15][16][17] are neglected.…”

Section: Introductionmentioning

confidence: 99%

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

et al. 2008

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We show that the dynamic response of electrically pumped semiconductor quantum dot lasers can be quantitatively understood by including the strongly nonlinear character of electron-electron scattering processes. The numerical simulations presented here combine a microscopic approach used for calculating the nonradiative scattering rates with a rate equation model used for modeling the complex dynamic turn-on behavior. Simulated turn-on delay, relaxation oscillation frequency, small-signal modulation response, and eye patterns of the quantum dot laser are presented and compared with experimental results at an emission wavelength of 1300 nm. The strong damping of the relaxation oscillations is attributed to an anomalous mechanism which involves Auger capture, including the mixed electron-hole process from the wetting layer ͑WL͒ into quantum dot states, and relies upon the pump current dependent ratio of WL electron and hole densities.

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Section: Introductionmentioning

confidence: 99%

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

et al. 2008

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“…The strong localization of few electrons in three dimensions is one of the key features of quantum dots [1] (QDs). This results in a variety of properties making them potential candidates for new semiconductor applications such as laser and memory devices [2,3,4]. One of those properties is the singular density of states, which relies on the alignment of the energy levels in the whole QD ensemble.…”

Section: Introductionmentioning

confidence: 99%

Self-consistent Coulomb effects and charge distribution of quantum dot arrays

2003

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This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QDs) which are embedded in a pn structure. Strong emphasis is being put on the statistical occupation of the electronic QD states which has to be solved self-consistently with the actual three-dimensional potential distribution. A model which is based on a Green's function formalism including screening effects is used to calculate the interaction of QD carriers within an array of QDs, where screening due to the inhomogeneous bulk charge distribution is taken into acount. We apply our model to simulate capacitance-voltage (CV) characteristics of a pn structure with embedded QDs. Different size distributions of QDs and ensembles of spatially perodic and randomly distributed arrays of QDs are investigated.

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“…The turn-on dynamics of quantum dot lasers have been theoretically investigated by Grundmann. 7,8 But there has been no experimental report on the measurement of Auger coefficients. In this letter we report the measurement of the turn-on delay of In 0.4 Ga 0.6 As/GaAs quantum dot lasers and the Auger coefficients in the dots.…”

mentioning

confidence: 99%

Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots

Ghosh

Bhattacharya

Stoner

et al. 2001

Applied Physics Letters

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We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a study of temperature-dependent large signal modulation experiments made on self-organized In0.4Ga0.6As/GaAs quantum dot lasers. The Auger coefficient decreases from ∼8×10−29 cm6/s at 100 K to ∼4×10−29 cm6/s at 300 K. This behavior, which is different from results in other higher-dimensional systems, is explained in terms of the temperature dependence of electron-hole scattering in the dots and contribution from higher lying states in the dot and adjoining layers.

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Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers

Cited by 18 publications

References 14 publications

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

Turn-on dynamics and modulation response in semiconductor quantum dot lasers

Self-consistent Coulomb effects and charge distribution of quantum dot arrays

Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots

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