Feedforward correction of mask image placement for proximity electron lithography

Omori, Shinji; Nohdo, Shinichiro; Motohashi, Tomonori; Kitagawa, Tetsuya; Susa, Takashi; Yotsui, Kenta; Itoh, Kojiro; Tamura, Akira

doi:10.1117/12.557821

Cited by 3 publications

(3 citation statements)

References 10 publications

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“…10,11 The minimum interval is 240-930 µm (2/3 of the beam size). We have to provide a set of deflection vectors at the interval points to take advantage of this function.…”

Section: Experiments 3 (Distortion For Model Hole Layer With 4 X 4 Blomentioning

confidence: 99%

Experimental analysis of image placement accuracy of single-membrane masks for LEEPL

et al. 2005

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We have fabricated seven masks with different patterns on a 27 mm x 34 mm single-membrane for Low Energy Electron-beam Proximity Lithography (LEEPL) by the wafer-flow process. We have examined the membrane flatness and image placement (IP) accuracy, which are essential qualities to be assured. We summarize the results as follows: Masks with membranes of 13 MP and 20MPa stress satisfy the membrane flatness requirement of less than 2 µm while a mask with a 6 MPa membrane does not. Maps of the distortion induced by the wafer-flow process are obtained for the masks with 13 MPa and 20 MPa membranes and their performance is explained in terms of the contraction of the mask substrate. The out-of-plane distortion for a 3 mm x 3 mm block of dense hole patterns with an opening ratio, ranging from 10% to 40%, has been evaluated. The distortion induced by the block has been evaluated and the effect of the local magnification correction on the IP error is examined. Maps of the distortion induced by the wafer-flow process and 4 x 4 blocks of 10% and 20% opening are obtained for a mask with 13 MPa membrane and the distortion induced by the blocks is estimated in 3σ. The uncorrectable IP error for the mask with the blocks of 10% opening is estimated to be 10 nm (in 3σ), which satisfies the specification for LEEPL masks.

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“…10,11 The minimum interval is 240-930 µm (2/3 of the beam size). We have to provide a set of deflection vectors at the interval points to take advantage of this function.…”

Section: Experiments 3 (Distortion For Model Hole Layer With 4 X 4 Blomentioning

confidence: 99%

Experimental analysis of image placement accuracy of single-membrane masks for LEEPL

et al. 2005

View full text Add to dashboard Cite

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“…Therefore, such a scheme can be tested to improve the accuracy of the correction table. 8 The correction scheme is inherently related to the structure of the COSMOS, and if this can be established, a correction table for intra-shot distortion can be made without locating metrology marks within the device patter regions.…”

Section: Alignmentmentioning

confidence: 99%

“…7 Since the marks for metrological measurement to determine the distortion cannot be located within the device area to be exposed, it is extremely difficult to correct the global placement error. 8 Considering these serious problems above as well as the availability of defect-free masks, the COSMOS supplied from Toppan Printing, Ltd. was adapted for this work. As shown in Fig.…”

Section: Choice Of Stencil Mask Formatmentioning

confidence: 99%

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

et al. 2005

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Proximity electron lithography (PEL) using the ultra-thin tri-layer resist system has been successfully integrated in our dual-damascene Cu/low-k interconnects technology for the 90-nm node. Critical comparison between conventional ArF lithography and PEL as to the via-chain yield for test element groups (TEGs) including approximately 2.9 million via chains was performed to demonstrate its production feasibility.

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Stress and image-placement distortions of 200mm low-energy electron projection lithography masks

Eguchi

Susa

Sumida

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electron projection lithography mask format layer stress measurement and simulation of pattern transfer distortion J. Vac. Sci. Technol. B 20, 3053 (2002); 10.1116/1.1521732Patterning-induced image placement distortions on electron beam projection lithography membrane masks Low-energy electron projection lithography (LEEPL) is a candidate for next generation lithography and thus the 1ϫ LEEPL mask requires a stringent local image placement (IP) error budget. Applying a doping method with silicon-on-insulator substrates, 700-nm-thick membranes were investigated for stress control and in-plane distortion (IPD), which are the main contributors to local IP errors. Stress control results show that at a dopant concentration of 6.74ϫ 10 19 /cm 3 , the membrane stress in a 10 mm test structure is 8.4 MPa. Also stress variation is excellent at 0.3 MPa across a 200 mm complementary stencil mask on support strut-type LEEPL mask. The IPD results indicate that small membrane window size, low void fraction, as well as low membrane stress is the proper strategy to allow a stencil mask with dense stencil patterns to meet required IPD. Additionally, the local IP errors of large scale integrated 90 nm hole pattern were demonstrated.

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Feedforward correction of mask image placement for proximity electron lithography

Cited by 3 publications

References 10 publications

Experimental analysis of image placement accuracy of single-membrane masks for LEEPL

Experimental analysis of image placement accuracy of single-membrane masks for LEEPL

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

Stress and image-placement distortions of 200mm low-energy electron projection lithography masks

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