Femtosecond laser patterning of graphene electrodes for thin-film transistors

Kasischke, Maren; Subaşı, Ersoy; Bock, Claudia; Pham, Duy Vu; Kunze, U.; Ostendorf, Andreas

doi:10.1016/j.apsusc.2019.01.198

Cited by 17 publications

(5 citation statements)

References 41 publications

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“…In 2001, before single layer graphene was experimentally discovered, Jeschke et al [53] identified by means of molecular dynamics simulations a new ablation mechanism of thin graphite films at fluences below the threshold for the damage of graphite planes (∼170 mJ cm −2 ). The last decade much work has been done [54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69] for the optimization of fs laser patterning processes in graphene by investigating the dependence of ablation process on the fs laser exposure parameters (e.g. fluence, pulse energy, pulse duration, repetition rate, exposure time and scanning speed).…”

Section: Introductionmentioning

confidence: 99%

Graphene nano-sieves by femtosecond laser irradiation

et al. 2022

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The formation of nano-pores in graphene crystal structure is alternative way to engineer its electronic properties, chemical reactivity, and surface interactions, enabling applications in technological fields such as sensing, energy and separation. The past few years, nano-perforation of graphene sheets has been accomplished by a variety of different methods suffering mainly from poor scalability and cost efficiency issues. In this work, we introduce an experimental protocol to engineer nanometer scale pores in CVD graphene membranes under ambient conditions, using low power ultra-short laser pulses and overcoming the drawbacks of other perforation techniques. Using AFM and SEM we visualized and quantified the nanopore network while Raman spectroscopy is utilized to correlate the nano-perforated area with the nanotopographic imaging. We suggest that Raman imaging provides the identification of nanoporous area and, in combination with AFM, we provide solid evidence for the reproducibility of the method, since under these experimental conditions, nanopores of a certain size distribution are formed.

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Section: Introductionmentioning

confidence: 99%

Graphene nano-sieves by femtosecond laser irradiation

et al. 2022

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“…Two types of surface modification can be observed: the wide gray stripes of ~4 µm width indicate the removal of graphene, and the narrow dark lines with the width below 1 µm are due to the modified surface of the sapphire substrate. The laser fluence at the center of the Gaussian beam at the focal plane was ~9 J/cm 2 , which was significantly above the ablation threshold of both graphene (~70 mJ/cm 2 [ 16 ]) and sapphire (~2 J/cm 2 [ 24 ]). Changing the distance between the focusing lens and the sample surface led to laser beam defocusing and a larger spot diameter, which, in turn, produced lower laser fluence.…”

Section: Resultsmentioning

confidence: 99%

“…Achieving accurate control and high reproducibility of graphene masks requires reliable patterning techniques, such as lithography. An attractive possibility to pattern graphene lies in using the ultrafast lasers [ 16 , 17 ]. Being contactless, this method reduces undesired modification of graphene, while due to its limited thermal influence, it can be applied for patterning graphene on sensitive substrates.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask

et al. 2023

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Epitaxial lateral overgrowth (ELO) of GaN epilayers on a sapphire substrate was studied by using a laser-patterned graphene interlayer. Monolayer graphene was transferred onto the sapphire substrate using a wet transfer technique, and its quality was confirmed by Raman spectroscopy. The graphene layer was ablated using a femtosecond laser, which produced well-defined patterns without damaging the underlying sapphire substrate. Different types of patterns were produced for ELO of GaN epilayers: stripe patterns were ablated along the and directions, a square island pattern was ablated additionally. The impact of the graphene pattern on GaN nucleation was analyzed by scanning electron microscopy. The structural quality of GaN epilayers was studied by cathodoluminescence. The investigation shows that the laser-ablated graphene can be integrated into the III-nitride growth process to improve crystal quality.

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“…Studies on femtosecond laser patterning of graphene electrodes for thin-film transistors showed that the quality of the patterned electrodes was enhanced by ablation in vacuum conditions due to debris reduction [190]. Femtosecond laser ablation has been adopted by Maurice et al for obtaining nanogaps in monolayer graphene, opening a promising path for development of graphene-based nanogap systems for molecular electronics, memories and nanodevices [191].…”

Section: Treatments Based On Laser Ablationmentioning

confidence: 99%