Field-effect modulation of the transport properties of nondoped SrTiO3

Shibuya, Keisuke; Ohnishi, T.; Uozumi, Takayuki; Sato, Taisuke; Lippmaa, Mikk; Kawasaki, Masashi; Nakajima, Kiyomi; Chikyow, Toyohiro; Koinuma, Hideomi

doi:10.1063/1.2207502

Cited by 40 publications

(43 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If our FET is compared with other perovskite-based FETs where hetero-interfaces between two single-crystalline perovskite oxides were employed: DyScO 3 /STO and CaHfO 3 /STO interfaces, µ FE , and I on /I off are 40 times and an order higher in our FET, respectively. 20,21 These performances of our FET are also comparable to the best performances of In 2 O 3 :ZnO-based FET. 22 The reasons for such high device performance can be attributed to the material properties of BSO, the use of epitaxial gate dielectric, the quality of the LIO/BLSO interface, and the possibility of the formation of two dimensional electron gas (2DEG) at the LIO/BLSO interface resulting from its polar discontinuity.…”

supporting

confidence: 67%

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

et al. 2015

View full text Add to dashboard Cite

We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.

show abstract

supporting

confidence: 67%

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

et al. 2015

View full text Add to dashboard Cite

show abstract

“…An alternative approach has shown that two dimensional electron gas can be created at SrTiO 3 /LaAlO 3 hetero-interface by a charge-transfer due to a polar discontinuity [9,10,11,12,13,14] or possible oxygen defects [15]. This electronically tailored interface was found to be superconducting as in the bulk material [14].Recently the performance of SrTiO 3 FET has been drastically improved [16,17] by overcoming the contacts and interface problems. These new devices showed metallic behavior down to 7 K [17].…”

mentioning

confidence: 99%

“…Recently the performance of SrTiO 3 FET has been drastically improved [16,17] by overcoming the contacts and interface problems. These new devices showed metallic behavior down to 7 K [17].…”

mentioning

confidence: 99%

Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO₃ Interface by Electric Field

et al. 2009

View full text Add to dashboard Cite

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration [1,2]. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO3 single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.The perovskite SrTiO 3 is sometimes called the "silicon of oxide electronics" because it is commonly used as a substrate for epitaxial growth of a variety of oxide films [3]. Not only it is an insulator with a band gap of 3.2 eV but also a quantum paraelectric with an extremely large dielectric constant of more than 10 6 at low temperatures [4]. N-type conduction has been realized by introducing a small number of oxygen vacancies or by cation substitutions. An insulator to metal transition occurs at a rather low carrier concentration of n ∼1018 cm −3 [5, 6] for a doped oxide system, which owes largely to the high mobility exceeding 10 4 cm 2 /Vs. Superconductivity emerges in a limited concentration range from n = 7 × 10 18 to 5 × 10 20 cm −3 and the transition temperature T c shows a bell shaped dependence on n with an optimum T c ∼ 0.35 K at n ∼ 10 20 cm −3 [7]. The carrier concentration required to achieve superconductivity is two orders of magnitude smaller than that for high-T c cuprates which is a great advantage to realize electrostatic control of insulator-metal and superconductor transitions.Such a unique doping properties of SrTiO 3 has triggered attempts to dope charged carriers electrostatically by using a field effect transistor (FET) structure. However, so far, attempts to realize metallic state have been unsuccessful [8]. This is due to several reasons, notably carrier trapping at the gate insulator/SrTiO 3 interface, Schottky barrier formation between SrTiO 3 and source and drain electrodes, and insufficient breakdown voltage of the gate insulators. An alternative approach has shown that two dimensional electron gas can be created at SrTiO 3 /LaAlO 3 hetero-interface by a charge-transfer due to a polar discontinuity [9,10,11,12,13,14] or possible oxygen defects [15]. This electronically tailored interface was found to be superconducting as in the bulk material [14].Recently the performance of SrTiO 3 FET has been drastically improved [16,17] by overcoming the contacts and interface problems. These new devices showed metallic behavior down to 7 K [17]. In this Letter, we extend our study to lower temperatures below 1 K, and show that the two-dimensional insulator-metal transition is indeed achieved at the interface between parylene and SrTiO 3 reversibly while sweeping the gate voltage. A superconducting transition to zero-resistance state was obs...

show abstract

“…However, it is difficult to make even metallic conduction at low temperature by a conventional MISFET. 11,33,34) High-density charge carrier by an EDLT overcomes the difficulty of obtaining the metallic state, and we succeeded for the first time to obtain a superconducting state that emerged from an insulating state by the electric field effect. By applying a gate bias of above 2.5 V, a SrTiO 3 EDLT with a PEO electrolyte shows metallic conduction down to 2 K. The sheet resistance decreases by two orders of magnitude with decreasing temperature because of the large increase in electron mobility at low temperature.…”

Section: Superconductivity and Low-temperature Transport Propertiesmentioning

confidence: 99%

Electric-Field-Induced Superconductivity on an Organic/Oxide Interface

Ueno

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Many superconductors have been developed by inducing charge carriers into a mother insulator compound. Chemical substitution of impurity atoms is usually used for inducing charge carriers, and this method is called “chemical doping”. Another method to tune charge carrier density is the electric field effect, which is widely utilized as a field-effect transistor. Here, we review recent progress in an electric field-effect study for developing a new oxide superconductor with an organic electrolyte gate. We first present a device configuration of an electric double layer transistor with oxide semiconductors, SrTiO3 and KTaO3. We then present the electrochemical interface properties and room-temperature device characteristics with various electrolytes. Finally, we present the superconductivity emerging at an organic/oxide interface, and discuss the phase diagram of electric-field-induced superconductors by comparing with superconductors obtained by chemical doping.

show abstract

Field-effect modulation of the transport properties of nondoped SrTiO3

Cited by 40 publications

References 16 publications

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO₃ Interface by Electric Field

Electric-Field-Induced Superconductivity on an Organic/Oxide Interface

Contact Info

Product

Resources

About

Field-effect modulation of the transport properties of nondoped SrTiO3

Cited by 40 publications

References 16 publications

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO3 Interface by Electric Field

Electric-Field-Induced Superconductivity on an Organic/Oxide Interface

Contact Info

Product

Resources

About

Tuning of Metal–Insulator Transition of Quasi-Two-Dimensional Electrons at Parylene/SrTiO₃ Interface by Electric Field