Field Emission from p‐Type Germanium

Fursey, G. N.; Sokolskaya, I. L.; Иванов, В. Г.

doi:10.1002/pssb.19670220104

Cited by 10 publications

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References 9 publications

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“…The estimation of 8 will be given further. Such effects are described in detail in our work [17]. The barium concentration mentioned above practically does not alter the work function and only slightly increases the field emission current.…”

Section: Field Emission From Ba-covered Gementioning

confidence: 59%

Study of Barium Adsorption on Germanium by Field‐Emission Microscopy

Sokolskaya

Иванов

Fursey

1967

Physica Status Solidi (b)

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The change in work function of barium-covered p-and n-type germanium emitters with the degree of coverage 0 is investigated by FEM. The curve of work function q against deposition time is similar to that for barium adsorption on metals. The work functions of clean field-desorbed surfaces of p-and n-type emitters are determined from the Fowler-Nordheim slopes with respect to that for barium-covered surfaces, assuming that the work function of the latter for 0 > 1 is qBa = 2.5 eV. The work functions are qp = (4.90 f0.05)eV and qn = (4.43 f 0.05) eV for ep = 3.7 Rcm and en = 2.5 Qcm, respectively. The difference in the observed work functions compares well with the difference of the Fermi level position. Metallic-like properties of barium on germanium are observed a t coverages 0 much less than a monolayer (0 = 0.007). Mccnenosamie U~M~H~H U B pa6o~bl mxona repMaHun p-M n-Tma n p~l noHpbr-T E~M ero 6 a p~e~, I I O K~~~J I O , YTO ~~B M C E~M O C T~ q(0) EiMeeT TaKo# me xapamep, ICaK npIl ancop6s~i1l 6apncr Ha MeTaJIJIe. El3 OTHOCHTeJlbHblX HaHJIOHOB KpElBblX @aynepa-Hopnrehfa HJIR qUCTbIX EI IIOHphITIJX 6 a p~i e~ (6 > 1) Ge 3MkITTePOB, OnpeJ&JleHa pa6o~a BbIXOna AJIR BMEITTBPOB, H3rOTOBaeHHbIX k13 p-Ei n-TkIna Ge MOHOHpHCTaJIJIOB; Tp = (4,90 & 0,05) eV Ei (Pn = (4,43 f 0,05) e v COOTBeTCTBeH-HO. P~~H O C T~ pa6OT BMxona xopoluo cornacyeTcx c p a a~~i s e t i B nonome-H E~M YPOBHB QepMEi B HCXOAHHX 06passax ep = 3,7 ncm EI en = 2,5 Qcm. 06HapyHteH0, 9TO MeTaJIJIOIIOn06HbIe CBO#CTBa IIOKpblTHa IIpORBJIBIOTCR yHte npEi e = 0,007.

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Section: Field Emission From Ba-covered Gementioning

confidence: 59%

Study of Barium Adsorption on Germanium by Field‐Emission Microscopy

Sokolskaya

Иванов

Fursey

1967

Physica Status Solidi (b)

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Untersuchungen zur Feldelektronenmission aus Germaniumeinkristallflächen

1971

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Inhaltsiibersicht%lit Hilfe der ,,probe-hole"-Technik wurden die Strom-Spannungs-Kennlinien der Beldemission aus Germaniumeinkristallflachen gemessen. Es wird iiber Ergebnisse berichtet, die an durch Felddesorption gereinigten und an gegliihten Germaniumemittern erhalten wurden. Aus der Steigung der Strom-Spannungs-Kennlinien konnen die Austrittsarbeitsdifferenzen der einzelnen Einkristallflachen ermittelt werden.

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On a model of photo-field-emission from p-type semiconductors

Yatsenko

1970

Phys. Stat. Sol. (a)

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Continuing the discussion of experimental results of photosensitive field emission from p‐type semiconductor cathodes [6], a problem of electron emission in a one‐dimensional metal–insulator‐semiconductor structure is considered. Introducing the electron lifetime in the inversion layer with respect to emission (τe) and the accumulation time of the inversion layer (τIL), the emission light–current–voltage characteristics in the inversion layer approximation are obtained from which the condition of photosensitive emission (τe ≪ τIL) follows. The discussion of the second photosensitivity condition (absence of the avalanche generation) shows that for semiconductors with a large electron affinity and a small gap width photosensitive emission without avalanche breakdown is possible with surface states of the density > 1013 cm−2 involved which are in field exchange with the valence band.

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Field Emission from p‐Type Germanium

Cited by 10 publications

References 9 publications

Study of Barium Adsorption on Germanium by Field‐Emission Microscopy

Study of Barium Adsorption on Germanium by Field‐Emission Microscopy

Untersuchungen zur Feldelektronenmission aus Germaniumeinkristallflächen

On a model of photo-field-emission from p-type semiconductors

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