Field-Plate Optimization of AlGaN/GaN HEMTs

Palankovski, V.; Vitanov, S.; Quay, R.

doi:10.1109/csics.2006.319926

Cited by 24 publications

(6 citation statements)

References 14 publications

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“…3. As it was expected [8], field plate regulates the electrical field within the 2DEG and decreases the intensity of electrical field both in the 2DEG region and the hotspot region. Similar to the electrical field, heat flux data can be obtained from electrical simulations.…”

Section: Resultssupporting

confidence: 57%

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Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices

Kara

Dönmezer

Canan

et al. 2016

Volume 1: Heat Transfer in Energy Systems; Thermophysical Properties; Theory and Fundamentals in Heat Transfer; Nanoscale Therm

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Field plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power densities, GaN HEMTs suffer significantly from the concentrated heating effects in a small region called hotspot located closer to the drain edge of the gate. Although; the stabilizing effect of field plate on the electrical field distribution in HEMTs is known by researchers, its effect on temperature distribution and the hotspot temperature is still not studied to a greater extend. For this purpose, finite element thermal modelling of devices with different sizes of field plates are performed using the joule heating distribution data obtained from 2D electrical simulations. Results obtained from such combined model show that the existence of a field plate changes the electrical field, therefore the heat generation distribution within device. Moreover; increasing the size of the field plate has an effect on the maximum temperature at the hotspot region. The results are used to analyze these effects and improve usage of field plates for high electron mobility transistors to obtain better temperature profiles.

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Section: Resultssupporting

confidence: 57%

“…On the other hand, the field plated GaN HEMTs are under intensive research to regulate sharp electric field variations in devices [8]. However; the effects of field plates on the hotspot region and device temperature are not studied enough to improve the system dynamics.…”

Section: Introductionmentioning

confidence: 99%

Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices

Kara

Dönmezer

Canan

et al. 2016

Volume 1: Heat Transfer in Energy Systems; Thermophysical Properties; Theory and Fundamentals in Heat Transfer; Nanoscale Therm

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show abstract

“…A multistep gate electrode and a source-connected field plate (SFP) implemented in the first metallization level were used to relax the electric field strength at the drain side of the gate=channel region. [9][10][11] The gate leakage current was reduced to 15 nA=mm by using a SiN gate dielectric. The deposition conditions and properties of the SiN layers were optimized to stabilize the donor-like traps at the SiN=AlGaN interface for controlling collapse and long-term R on characteristics.…”

Section: Gan Hemt Technology and Device Descriptionmentioning

confidence: 99%

Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

Nagahisa¹,

Ichijoh²,

Suzuki³

et al. 2016

Jpn. J. Appl. Phys.

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A 600 V normally-ON GaN high-electron mobility transistor (HEMT) technology with an intrinsic specific ON resistance R on · A = 500 mΩ·mm2 and a breakdown voltage of BV dss ∼ 1100 V is described. A novel high-power 30-A-class GaN-Si MOSFET cascode device with a back-side source Si laterally diffused MOSFET (LDMOSFET) and an embedded clamp diode are employed to enable the GaN HEMT to withstand 400 V and a more than 5 µs load short circuit condition, as required in switching inverter applications. Considerations for improvement of the GaN lateral HEMT short-circuit withstand capability are addressed.

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“…However, the non-uniform electric field distribution caused by the combined effect of gate and drain voltages has a significant impact on electron motion at the AlGaN/GaN heterojunction interface, resulting in a lower electron velocity on the source side than on the drain side, which lowers the carrier transport efficiency [ 7 ]. Related strategies for controlling the electric field distribution, such as field plate technology [ 8 ] and a dual-metal gate (DMG) structure [ 9 ], have recently been investigated. DMG structures, in particular, can significantly regulate the electric field distribution in the channel, leading to a higher output current in the devices without considering the self-heating effect [ 10 ], as well as suppressing short-channel effects such as drain-induced barrier lowering (DIBL) [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Deng

Yuan³

et al. 2022

Materials

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The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. The simulations reveal that the DMG structure devices have a 10-percent higher transconductance than the SMG structure devices when the self-heating effect is considered. In the meantime, employing the DMG structure, a decrease of more than 11% in the maximum temperature rise of the devices can be achieved at the power density of 6 W/mm. Furthermore, the peak in heat generation distribution at the gate edge of the devices is reduced using this structure. These results could be attributed to the change in the electric field distribution at the gate region and the suppression of the self-heating effect. Therefore, the electrical and thermal performances of AlGaN/GaN HEMT devices are improved by adopting the DMG structure.

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Field-Plate Optimization of AlGaN/GaN HEMTs

Cited by 24 publications

References 14 publications

Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices

Effects of Field Plate on the Maximum Temperature and Temperature Distribution for GaN HEMT Devices

Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

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