Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications

Nagano, Fuya; Iacovo, Serena; Phommahaxay, Alain; Inoue, Fumihiro; Sleeckx, Erik; Beyer, Gerald; Beyne, Eric; Gendt, Stefan De

doi:10.1149/2162-8777/abd260

Cited by 22 publications

(5 citation statements)

References 30 publications

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“…A peak of C-H positioned in the 2700-3100 cm −1 range, Si-CH 3 , which can be related to the unreacted hydrocarbon residue. 33 The Si-O absorption peak is stronger in the samples for the lowest two C 2 H 2 deposition pressures, because of the higher O content in those films, 6.6 and 5.4 at%, for 0.07 and 0.1 mTorr, respectively. The absorption band at around 2150 cm −1 is assigned to Si-H and becomes more distinct as the acetylene pressure was increased due to higher H content which is proportional to the flow rate of the C source, C 2 H 2 , as proven with ERD analysis, shown in the elemental composition analysis section.…”

Section: Resultsmentioning

confidence: 90%

A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane

Abdelal

Khatami

Mascher

2023

ECS J. Solid State Sci. Technol.

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We present a comparative study of the properties of amorphous hydrogenated silicon carbonitride (SiCN:H) thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. The elemental composition, growth rate, density, and refractive index values of the SiCN:H thin films were analyzed as functions of flow rates of pure acetylene and methane hydrocarbon precursors. The mechanical properties were studied with nanoindentation measurements to compare hardness and Young’s modulus of the SiCN:H thin films deposited with different carbon sources. Variable angle spectroscopic ellipsometry, elastic recoil detection, and Rutherford backscattering spectrometry were used to determine thin film properties. Higher carbon content in the thin films was achieved by acetylene compared to methane at the same flow rate due to its lower ionization energy during the deposition. Infrared absorption spectra of the thin films deposited with acetylene precursor were analyzed to determine the correlation between the hydrocarbon flow rate and the intra-molecular bond intensities in the thin films. We found that the significant contribution to the decreased hardness comes from hydrogen in the SiCN matrix, which makes the films less dense.

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Section: Resultsmentioning

confidence: 90%

A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane

Abdelal

Khatami

Mascher

2023

ECS J. Solid State Sci. Technol.

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“…The advanced packaging technology, including fan-out wafer level packaging and throughsilicon via, allows for three-dimensional (3D) device integration that leads to improved device performance and miniaturized system electronics [3][4][5]. Direct wafer bonding is one of the most essential techniques to build stack-up structures of manufactured semiconductor chips in the packaging process [6][7][8]. Both homogeneous and heterogeneous integrations between diverse semiconductor materials and Si substrates can be achieved via the direct wafer bonding technique, enabling numerous applications such as silicon-on-insulator fabrication and silicon-based microelectromechanical device manufacturing to be more widely employed [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…As its name denotes, direct wafer bonding refers to a technique that creates a wafer pair in which the surfaces of two wafers adhere to each other without any additional intermediate layers, which is an advantage in terms of the throughput and accuracy of 3D integration [7]. There have been numerous reports on direct wafer bonding considering target materials, procedures, etc., since the early 1960s when high-temperature (>800 • C) annealing was often employed to achieve sufficient bonding strengths [12,13].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO2 Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing

Lee

You²,

Cho³

et al. 2022

Micromachines

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Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct wafer bonding have been reported, there is still a lack of deep investigations focusing on the plasma itself. Other than the plasma surface treatment, the wafer bonding process includes multiple steps such as surface cleaning and annealing that require comprehensive studies to maximize the bonding strengths. In this work, we evaluate the various process steps of Si–SiO2 wafer bonding through case-by-case experimental studies, covering factors including the plasma conditions for surface treatment and secondary factors such as the time intervals between some process steps. The results show that plasma treatment with increasing input power has a trade-off between bonding strengths and interfacial voids, requiring the optimization of the plasma conditions. It is also noticeable that the effects of plasma treatment on wafer bonding can be improved when the plasma-treated wafers are stored in ambient atmosphere before the subsequent process step, which may suggest that wafer exposure to air during the bonding process is advantageous compared to processing entirely in vacuum. The results are expected to allow plasma-assisted direct wafer bonding technology to play a bigger role in the packaging process of semiconductor device manufacturing.

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“…According to previous studies, SiCN has unique properties, including a high bonding energy after low-temperature annealing, the ability to suppress the formation of outgas-induced voids, and the ability to function as a superior diffusion barrier against Cu. 7,[17][18][19][20][21] Therefore, we investigated barrier CMP with a nonselective slurryleveling Cu pad height close to the SiCN layer as the target surface field material. In addition, this surface topography needs to be maintained throughout the process flow prior to the bonding.…”

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confidence: 99%

Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps

Nakayama,

Hayama,

Tanaka

et al. 2024

ECS J. Solid State Sci. Technol.

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Hybrid bonding has become a promising approach to realizing fine pitch interconnection via bonding for both the wafer level and die level. The morphology and cleanliness of the bonding surface are critical to ensure a high yield. Therefore, surface planarization by chemical mechanical polishing (CMP) is considered a key process. The recess on the Cu pad must be controlled to be less than 5 nm by adjusting the removal rate between the Cu, the barrier layer, and the bonding dielectric layer. Conventionally, SiO2 has served as the bonding dielectric. However, SiCN is considered a promising dielectric because of its high bonding strength, suppression of voids, and ability to function as a Cu diffusion barrier. Here, we investigated simultaneous Cu, barrier, and SiCN CMP for hybrid bonding. Post-CMP processes such as cleaning and activation were also assessed. The results revealed that the removal rate of the three materials could be adjusted by dilution of the slurry and oxidizer. Lower selectivity was achieved at a certain dilution rate in an alkaline barrier slurry. Plasma activation revealed that the Cu passivation layer formed during cleaning was removed. Therefore, residues from CMP and post-CMP processes did not affect Cu prior to the hybrid bonding.

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Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications

Cited by 22 publications

References 30 publications

A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane

A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane

Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO2 Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing

Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps

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