is, graphene, transition metal dichalcogenides (TMDs), [ 2,3 ] topological insulators, [ 4 ] h-BN [ 5 ] and h-AlN, [ 6 ] as well the recent phosphorene, [ 7 ] silicene, [ 8 ] and germanene [ 9 ] provide the ability to control the channel thickness at atomic level. This characteristic translates into improved gate control over the channel barrier and into reduced short-channel effects, thus paving the way toward ultimate miniaturization and new device concepts. Recently, 2D transition metal dichalcogenides, have proven to be promising candidates for electronics and optoelectronic applications. [10][11][12][13][14][15][16] From a pioneering perspective, the availability of TMDs with different work functions and band structures guarantees a great potential for band gap engineering of heterostructures. These systems are fundamentally different and more fl exible than traditional heterostructures composed of conventional semiconductors. In particular, due to the weak interlayer interaction, a TMD molecular layer grows from the beginning with its own lattice constant forming an interface with reduced amount of defects. The relaxed lattice matching condition permits to combine almost any layered material and create artifi cial heterojunctions with designed band alignment. 2D heterostructures

Low-temperature (T = 1.7-77 K) multi frequency electron spin resonance (ESR)study on p-type 2H-polytype geological MoS2 crystals reveals p-type dopingpredominantly originating from As atoms substituting for S sites in densities of (2.4 ± 0.2) × 10 17 cm −3 . Observation of a "half field"(g ∼ 3.88) signal firmly correlating with the central Zeeman As accepter signal indicates the presence of spin S > ½ As agglomerates, which together with the distinct multicomponent makeup of the Zeeman signal points to manifest non-uniform As doping; only ∼13% of the total As response originates from individual decoupled As dopants.From ESR monitoring the latter vs. T, an activation energy Ea = (0.7 ± 0.2) meV is obtained. This unveils As as a noticeable shallow acceptor dopant, appropriate for realization of effective p-type doping in targeted 2DMoS2-based switching devices.Over the recent years, two-dimensional (2D) materials, in particular, the transition metal dichalcogenides (TMDs) have enjoyed a resurgence of research interest driven by their potential for replacing traditional semiconductors in next generation nanoelectronic devices. 1-6 Among the TMDs, 2D molybdenumdisulfide (MoS2), specifically, has been widely studied for its outstanding photocatalytic, optoelectronic, and mechanical properties. 3,6 Bulk MoS2 (molybdenite) is an abundant soft mineral consisting of three-layered S-Mo-S sheets of hexagonal structure and strong in-plane ionic-covalent bonding, held together by van der Waals forces; It is a semiconductor with indirect band gap of ∼1.3 eV, turning to a direct (optical) gap of 1.85 eV in monolayer form. 1,2 Obviously, to enable full exploitation of the

In situ doped epitaxial Si:P films with P concentrations >1 × 1021 at./cm3 are suitable for source-drain stressors of n-FinFETs. These films combine the advantages of high conductivity derived from the high P doping with the creation of tensile strain in the Si channel. It has been suggested that the tensile strain developed in the Si:P films is due to the presence of local Si3P4 clusters, which however do not contribute to the electrical conductivity. During laser annealing, the Si3P4 clusters are expected to disperse resulting in an increased conductivity while the strain reduces slightly. However, the existence of Si3P4 is not proven. Based on first-principles simulations, we demonstrate that the formation of vacancy centered Si3P4 clusters, in the form of four P atoms bonded to a Si vacancy, is thermodynamically favorable at such high P concentrations. We suggest that during post epi-growth annealing, a fraction of the P atoms from these clusters are activated, while the remaining part goes into interstitial sites, thereby reducing strain. We corroborate our conjecture experimentally using positron annihilation spectroscopy, electron spin resonance, and Rutherford backscattering ion channeling studies.

Surface activated bonding is more and more attractive as a key technology to realize higher performance CMOS devices independent of scaling. The major challenge of dielectric bonding is to decrease the process temperature in order to be compatible with CMOS processing. In the past, we demonstrated low temperature bonding using SiCN as interfacial dielectric layer, where we have obtained a bond energy above 2.2 J/m 2 with a post bond annealing process of 250°C. In this work, the composition of SiCN was varied aiming at the identification of the key elements taking part in the bonding mechanism. The film density, roughness, CMP outcome, water contact angle and impact of plasma activation have been investigated on three different compositions of SiCN. Bond energy above 2.5 J/m 2 is obtained for the carbon rich SiCN film.

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