Film-substrate a-Si solar cells with a new monolithic series-connected structure

Ichikawa, Yukimi; Tabuchi, K.; Takano, Akihiro; Fujikake, S.; Yoshida, Takashi; Sakai, Hiroshi

doi:10.1016/0022-3093(96)00049-x

Cited by 19 publications

(8 citation statements)

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“…In conventional c-Si solar cells, a-SiO:H has already been used as surface passivation layer [5]. Being a wide-optical-gap material it has important application as window layer in multi-junction solar cells [6,7]. There are many other reports on the preparation of a-SiO:H thin films as a wide-gap material [8][9][10][11].…”

Section: Introductionmentioning

confidence: 98%

Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Samanta

Das

2009

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 98%

Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Samanta

Das

2009

Solar Energy Materials and Solar Cells

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“…Optical band gap (E 04 ), refractive index (n), and conductivity can be modified over a wide range by varying input gas ratios during material growth. Several reports concerned a preparation of silicon oxide thin films as p-type window layers [1][2][3]. An optical gap (E 04 ) of 1.95-2.06 eV for p-type silicon oxide films was reported [2,3].…”

mentioning

confidence: 99%

“…1 Introduction Silicon oxide (SiO x :H), being a wide optical gap material, has been the subject of research as a material for photovoltaic applications [1][2][3][4][5][6][7][8][9]. Electrical, optical and structural properties of both amorphous (aSiO x :H) and microcrystalline (μc-SiO x :H) silicon oxide films have been investigated.…”

mentioning

confidence: 99%

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Smirnov

Böttler

Lambertz

et al. 2010

Phys. Status Solidi (c)

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N‐type hydrogenated microcrystalline silicon oxide (μc‐SiOx:H) layers were used as window layers in n‐side illuminated microcrystalline silicon n–i–p solar cells. Optical, electrical and structural properties of μc‐SiOx:H films were investigated by Photothermal Deflection Spectroscopy, conductivity and Raman scattering measurements. μc‐SiOx:H layers were prepared over a range of carbon dioxide (CO2) flow and film thickness, and the effects on the solar cell performance were investigated. By optimising the μc‐SiOx:H window layer properties, an improved short‐circuit current density of 23.4 mA/cm2 is achieved, leading to an efficiency of 8.0% for 1μm thick absorber layer and Ag back contact. The correlation between cell performance and μc‐SiOx:H layer properties is discussed. The results are compared to the performance of solar cells prepared with alternative optimised window layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…As a wide optical gap material, silicon oxide (SiO x :H) has been the subject of research as a material for photovoltaic applications [1][2][3][4][5][6][7][8][9]. Electrical, optical and structural properties of both amorphous (a-SiO x :H) and microcrystalline (μc-SiO x :H) silicon oxide films have been studied.…”

Section: Introductionmentioning

confidence: 99%

“…Electrical, optical and structural properties of both amorphous (a-SiO x :H) and microcrystalline (μc-SiO x :H) silicon oxide films have been studied. Several reports concerned a preparation of silicon oxide thin films as p-type window layers [1][2][3]. Optical band gap (E 04 ), refractive index (n), and conductivity can be modified over a wide range by varying input gas ratios during material growth.…”

Section: Introductionmentioning

confidence: 99%

N-type Microcrystalline Silicon Oxide (μc-SiO_x:H) Window Layers with Combined Anti-reflection Effects for n-i-p Thin Film Silicon Solar Cells

Smirnov

Boettler²,

Lambertz

et al. 2010

MRS Proc.

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N-type hydrogenated microcrystalline silicon oxide (μc-SiO x :H) films were used as window layers in n-side illuminated microcrystalline silicon n-i-p solar cells. Optical, electrical and structural properties of μc-SiO x :H films were investigated by Photothermal Deflection Spectroscopy, conductivity and Raman scattering measurements. μc-SiO x :H layers were prepared over a range of carbon dioxide (CO 2 ) flow and film thickness, and the effects on the solar cell performance were investigated. By optimising the μc-SiO x :H window layer properties, an improved short-circuit current density of 23.4 mA/cm 2 is achieved, leading to an efficiency of 8.0% for 1 μm thick absorber layer and Ag back contact. The correlation between cell performance and reduced reflection in μc-SiO x :H n-i-p solar cells is discussed. The results are compared to the performance of solar cells prepared with alternative optimised window layers.

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Film-substrate a-Si solar cells with a new monolithic series-connected structure

Cited by 19 publications

References 0 publications

Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

N-type Microcrystalline Silicon Oxide (μc-SiO_x:H) Window Layers with Combined Anti-reflection Effects for n-i-p Thin Film Silicon Solar Cells

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Film-substrate a-Si solar cells with a new monolithic series-connected structure

Cited by 19 publications

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Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiOx:H) n‐layer

N-type Microcrystalline Silicon Oxide (μc-SiOx:H) Window Layers with Combined Anti-reflection Effects for n-i-p Thin Film Silicon Solar Cells

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Product

Resources

About

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

N-type Microcrystalline Silicon Oxide (μc-SiO_x:H) Window Layers with Combined Anti-reflection Effects for n-i-p Thin Film Silicon Solar Cells