Fine-pitch bonding technology with surface-planarized solder micro-bump/polymer hybrid for 3D integration

Inoue, Fumihiro; Derakhshandeh, Jaber; Lofrano, Melina; Beyne, Eric

doi:10.35848/1347-4065/abd69c

Cited by 9 publications

(3 citation statements)

References 23 publications

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“…Owing to the difficulties in handling and electroplating thin TSV wafers (<200 μm), dry etching is often used to form blind vias prior to the deposition of insulating, barrier, and seed layers, followed by electroplating or electroless plating to fill the blind holes with metal. Subsequently, wafer thinning and chemical–mechanical polishing processes are used to expose the metal filling to form through vias [ 17 , 18 , 19 ]. Although dry etching during TSV preparation can be conducted at low temperatures without device damage, the high hardness and stability of diamonds cause various problems, such as low etching efficiency and complex process flow [ 20 ].…”

Section: Introductionmentioning

confidence: 99%

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Zhao

Wei

et al. 2023

Micromachines

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Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and prominent local hot spots. Among bulk materials, diamond has the highest thermal conductivity (≥2000 W/mK), thereby prompting its application in high-power semiconductor devices for heat dissipation. In this paper, we report an innovative bottom-up Cu electroplating technique with a high-aspect-ratio (10:1) through-diamond vias (TDV). The TDV structure was fabricated by laser processing. The electrolyte wettability of the diamond and metallization surface was improved by Ar/O plasma treatment. Finally, a Cu-filled high-aspect-ratio TDV was realized based on the bottom-up Cu electroplating process at a current density of 0.3 ASD. The average single-via resistance was ≤50 mΩ, which demonstrates the promising application of the fabricated TDV in the thermal management of advanced packaging systems.

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Section: Introductionmentioning

confidence: 99%

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Zhao

Wei

et al. 2023

Micromachines

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“…Experimental results showed that the average deviations in the X direction were reduced to 0.387 mm and 0.429 mm after precise positioning of the feature points, respectively. Some spatial welds are just oriented towards the relative regular curves such as spirals and coherent lines [14,15]. Not much attention is paid to the three-dimensional (3D) complex welding seams with an arbitrary shape.…”

Section: Introductionmentioning

confidence: 99%

A Novel 3D Complex Welding Seam Tracking Method in Symmetrical Robotic MAG Welding Process Using a Laser Vision Sensing

Zhang

Huang

et al. 2023

Symmetry

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The welding seam tracking operation ensures that the welding torch of the welding robot can go with the welding seam during the whole symmetrical robotic welding procession. To achieve three-dimensional complex welding seams tracking, a four-step welding seam tracking system is suggested based on segmented scanning, combined filtering, feature-point extraction, and welding path planning. From using the laser sensor installed at the end of welding robot, the welding seam data was continuously collected in multiple segments by segmented scanning. For the purpose of improving seam tracking accuracy, a combined filtering technique was used to correct the data to reduce the effects of burrs, data distortion, and noise on the surface of the weldment. Then, the feature points were collected so that the coordinate system will be calibrated to identify the welding points. Finally, a spatial welding path was obtained by welding path planning. Experimental investigations of the two-dimensional (2D) symmetrical S-shaped and three-dimensional (3D) curved welding seams were conducted. The obtained results demonstrate the proposed method can form a complete welding path. The average errors of the two weldments are about 0.296 mm and 0.292 mm, respectively. This shows that the proposed tracking method is effective and can provide a reference for the research of high-precision seam tracking and automatic welding.

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“…These are either based on 3D sequential or monolithic integration requiring solder base micro bump interconnects and TSV's (Through Silicon Via). [1][2][3][4][5][6][7] Wafer-to-wafer direct hybrid bonding has recently been raised as one attractive stacking scheme enabling finer pitch interconnection, high-accuracy integration, and lower production cost. Direct bonding can now be performed at room temperature on a full wafer-level, because of the combination of the ultra-smooth surface obtained by chemical mechanical polishing (CMP) and the plasma activated dielectric surface.…”

mentioning

confidence: 99%

Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding

Nagano

Iacovo

Phommahaxay

et al. 2022

ECS J. Solid State Sci. Technol.

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Achieving a void-free bonding interface is an important requirement for the wafer-to-wafer direct bonding process. The two main potential mechanisms for void formation at the interface are (i) void formation induced by gas, such as condensation by-products caused by the bonding process or outgassing of trapped precursors, and (ii) void formation induced by physical obstacles, such as particles. In this work, emphasis is on the latter process. Particles were intentionally deposited on the wafer prior to bonding to study the kinetics of the physical void formation process. Void formations induced by particles deposited on different dielectrics bonding materials were analyzed using scanning acoustic microscopy and image software. The void formation mechanism is then discussed along with the wafer bonding dynamics at room temperature.

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Fine-pitch bonding technology with surface-planarized solder micro-bump/polymer hybrid for 3D integration

Cited by 9 publications

References 23 publications

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

A Novel 3D Complex Welding Seam Tracking Method in Symmetrical Robotic MAG Welding Process Using a Laser Vision Sensing

Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding

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