Abstract:The temperature distribution in the cell of single crystal diamond grown by the temperature gradient method has been studied, which is based on the finite element method. Our results shwo that the temperature distribution in the synthetic process of single crystal diamond is not uniform. The highest temperature in the cell is located at the outside of single carbon solvent, and the lowest temperature in the cell is located near the diamond seed. The heat transfer and the mass transport have a same direction (f… Show more
“…Many improved numerical methods for fast thermal analysis were developed, [21][22][23][24] in which compact heat transfer equations are solved to characterize the temperature distribution in all parts of the IC chip including the thick substrate based on partitioning an IC chip into many discrete three-dimensional (3D) elements. [25,26] The accuracy of the temperature distribution increases with the number of discrete 3D thermal elements increasing. In this case, the calculation would be significantly time-consuming, which makes it hardly possible to achieve a large scale circuit.…”
In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature. The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.
“…Many improved numerical methods for fast thermal analysis were developed, [21][22][23][24] in which compact heat transfer equations are solved to characterize the temperature distribution in all parts of the IC chip including the thick substrate based on partitioning an IC chip into many discrete three-dimensional (3D) elements. [25,26] The accuracy of the temperature distribution increases with the number of discrete 3D thermal elements increasing. In this case, the calculation would be significantly time-consuming, which makes it hardly possible to achieve a large scale circuit.…”
In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature. The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.
Mei-Hua(胡美华) a) , Li Shang-Sheng(李尚升) a) , Ma Hong-An(马红安) b) , Su Tai-Chao(宿太超) a) , Li Xiao-Lei(李小雷) a) , Hu Qiang(胡 强) a) , and Jia Xiao-Peng(贾晓鹏) a)b) †
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