Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Jiang, Maogong; Fu, Guicui; Ceccarelli, Lorenzo; Du, He; Fogsgaard, Martin Bendix; Bahman, Amir Sajjad; Yang, Yongheng; Iannuzzo, Francesco

doi:10.1109/ecce.2019.8912236

Cited by 12 publications

(7 citation statements)

References 20 publications

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“…5, for the investigated device the collector is at the bottom of the IGBT die while the emitter is at the top. The physical properties of the module constitutive materials can vary substantially between manufacturers [9,10]. For simplicity, the material physical properties were selected from a range of values available in the open literature.…”

Section: Module Characterizationmentioning

confidence: 99%

“…Table 2 shows the selected values used for the different module components materials physical properties. Given that the IGBT die is responsible for most of the electrical conduction losses and can consequently be considered as the principal heat source of the module, a temperature dependent electrical conductivity characteristic [10] is adopted for this component, to achieve a more realistic simulation. The parameters values used for the IGBT conductivity equation were selected to follow an equivalent silicon electrical conductivity, derived by using the commercial IGBT module VCE-IC characteristic, the module geometric dimensions and the electrical conductivity of the IGBT materials listed in Table 2 that are part of the current conduction path [10].…”

Section: Module Characterizationmentioning

confidence: 99%

“…Direct measuring of electro-mechanical-thermal effects on the IGBT is extremely difficult, and such analysis are often conducted with the help of numerical models. For its capability to simulate the complex interactions between the different IGBT components and materials, the use of finite element (FE) models is commonly used in the detailed analysis of IGBTs thermal behaviour [9,10].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

IGBT finite element model for fibre bragg grating sensor installation analysis

Vilchis-Rodriguez¹,

Chen²,

Djurović³

et al. 2022

IET Conf. Proc.

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An IGBT finite element model aimed at facilitating the assessment of Fibre Bragg Grating sensing based direct on-chip temperature monitoring is first presented in this paper. A commercial off-the-shelf IGBT module geometry is characterised, and a thermo-electrical finite element model is then established using its features. The model is subsequently employed to evaluate the local thermal disturbances that may be introduced by the installation of the optical based temperature sensor directly on the top surface of the IGBT chip. The effects of the sensor thermal interface material characteristics, e.g., thermal conductivity and size, in the local temperature environment are investigated.

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Section: Module Characterizationmentioning

confidence: 99%

Section: Module Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

IGBT finite element model for fibre bragg grating sensor installation analysis

Vilchis-Rodriguez¹,

Chen²,

Djurović³

et al. 2022

IET Conf. Proc.

View full text Add to dashboard Cite

show abstract

“…The main idea behind such an approach is to monitor pre-defined electrical, physical or chemical parameters, also called health indicators, in order to make an indirect lifetime estimation of the tested device. Furthermore, such test results may be used to implement the physical laws of fatigue into FEM-models and to adjust those models to reality [32].…”

Section: A Thermal and Power Cyclingmentioning

confidence: 99%

Active Power Cycling Test Bench for SiC Power MOSFETs—Principles, Design, and Implementation

Baba

Gieraltowski

Jasiński

et al. 2021

IEEE Trans. Power Electron.

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One way to achieve the best in class reliability is the implementation of a Design for Reliability methodology into the design process in order to estimate the lifetime of each individual critical component, based on proper reliability models for failure modes. The main drawback of the above-mentioned approach is that it relies on handbook-based reliability models, which usually are only accurate for particular components. This fact causes the necessity to develop a testing procedure for SiC power MOSFET, to determine its reliability model parameters. Such model could be further implemented in the Design for Reliability methodology for the high performance power supply design process. In this paper, a cost effective and industrial friendly laboratory setup for Active Power Cycling of SiC power MOSFETs in SOT-227b housing is presented. By this example, various control strategies for accelerated lifetime testing, degradation indicators for wear out condition monitoring and junction temperature estimation methods are compared on their impact on test results and complexity in either laboratory setup and its maintenance procedure. Technical issues related to the start-up of Active Power Cycling test and failure detection algorithm are discussed. Finally, test results for SiC power MOSFETs subjected to over 63355 power cycles are presented.

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“…The degradation of multiple bond-wires on an IGBT in a power module was investigated in [76] and [77]. 3D multi-physics finite element analysis was used to evaluate the stresses and strains in the bond-wires during operation.…”

Section: Impact Of Degradation On System Behaviourmentioning

confidence: 99%

Multi-timescale Modelling for Reliability Analysis of Power Electronic-Based Systems

Bendix Fogsgaard

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show abstract

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Cited by 12 publications

References 20 publications

IGBT finite element model for fibre bragg grating sensor installation analysis

IGBT finite element model for fibre bragg grating sensor installation analysis

Active Power Cycling Test Bench for SiC Power MOSFETs—Principles, Design, and Implementation

Multi-timescale Modelling for Reliability Analysis of Power Electronic-Based Systems

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