First order Raman scattering in GaN

Cingolani, A.; Ferrara, M.; Lugarà, M.; Scamarcio, Gaetano

doi:10.1016/0038-1098(86)90778-7

Cited by 81 publications

(33 citation statements)

References 6 publications

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“…The LO-phonon peaks are not of equal spacing due to the fact that they are a superposition of phonon peaks from mainly the 30 Å and 40 Å quantum wells. A multiple peak Gaussian-fit of the peaks using a phonon energy of 88 meV, 12 including contributions of LO-phonons from the 30 Å and 40 Å wells, provides a good fit to the experimental data.…”

Section: Resultsmentioning

confidence: 98%

The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

Ng¹,

Harel²,

Chu³

et al. 2001

Journal of Elec Materi

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Section: Resultsmentioning

confidence: 98%

The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

Ng¹,

Harel²,

Chu³

et al. 2001

Journal of Elec Materi

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“…The observed modes do agree with the selection rule of the C 6v symmetry for the geometry used here. 15 The strongest line at 567 cm Ϫ1 is the high-frequency E 2 mode belonging to the hexagonal wurtzite crystal. The 418-cm Ϫ1 peak is from the A 1g mode of sapphire substrate, which serves as a useful reference for other spectral features.…”

Section: A Resonant Raman Scatteringmentioning

confidence: 98%

Yellow luminescence inn-type GaN epitaxial films

et al. 1997

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Photoluminescence, resonant Raman scattering, and photoconductivity measurements have been employed to study the yellow emission in undoped n-type and a set of Se-doped GaN epitaxial films. It is best described by a transition from the conduction-band edge to a deep acceptor. Unlike the donors and acceptors used in most previous studies that substitute Ga sites, Se atoms can replace N sites. With this unique fact, we identify that the origin of the yellow emission involves the nitrogen antisite. In addition, it is found that persistent photoconductivity can be observed after the yellow band excitation. We further suggest that the nitrogen antisite exhibits a metastable behavior similar to the arsenic antisite in GaAs. ͓S0163-1829͑97͒07735-7͔ YELLOW LUMINESCENCE IN n-TYPE GaN EPITAXIAL FILMS

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“…14,16,17 Raman scattering is a noncontact and nondestructive technique for studying bonding characteristics and stresses and strains. The vibrational modes in hexagonal and cubic GaN have been studied intensively by Raman spectroscopy, [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] and it shows that Raman spectroscopy is able to distinguish the two phases in GaN. 6,24,26,35 It has been used to study strains in GaN thin film heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Raman studies of GaN/sapphire thin film heterostructures

Hushur

Manghnani

Narayan

2009

Journal of Applied Physics

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Using Raman spectroscopy, we have studied the optical phonon modes of GaN nucleation layers with the thicknesses of 7 and 45nm, grown on sapphire (0001) substrates by metal organic chemical vapor deposition at low temperatures (500–600°C). These layers consisted of mixed hexagonal and cubic phases. The Raman results from mixed phases were compared with those from pure hexagonal layers which were grown at higher temperatures over 1000°C. The E2H and A1(LO) phonon modes are observed at 548 and 733cm−1 for 45nm thick nucleation layer, while the silent low-frequency B1 mode which is forbidden in good quality hexagonal GaN is observed at 314cm−1. The presence of the strong hexagonal modes for GaN nucleation layers of 45nm thick confirms the crystalline nature of the GaN nucleation layer and dominant hexagonal phase in this mixed cubic-hexagonal nucleation layer. The observed frequencies are shifted with respect to the corresponding A1 and E2 phonon modes in hexagonal GaN. The decrease in mode frequency implies the presence of in-plane tensile strain in these GaN nucleation layers of 45nm thick. The Raman scattering spectra taken from different positions on the sample show similar spectral features, indicating that the GaN nucleation layers of 45nm thick are homogeneous in micron scale.

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First order Raman scattering in GaN

Cited by 81 publications

References 6 publications

The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

Yellow luminescence inn-type GaN epitaxial films

Raman studies of GaN/sapphire thin film heterostructures

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