Flat-Topped Emission with Spectral Width above 500 nm from InAs/InP Quantum Dot Waveguide Array Light-Emitting Diode

Abstract

Flat-topped emission with a spectral width greater than 500 nm was obtained from self-assembled Stranski-Krastanov (SK) InAs/InP quantum dots (QDs) grown by selective area low-pressure metal organic vapor phase epitaxy using a double-capping procedure. Selective area growth using an SiO 2 mask with narrow stripes was carried out to tailor a wide emission range for the QDs in sixteen arrayed waveguides. Each waveguide core contained three stacked QD layers with different QD heights and Ga content in the GaInAs buffer layer. An investigation was carried out into the optimum Ga content and QD height for increasing the emission intensity and obtaining equal intensity from each QD layer.

Thermodynamic modelling of InAs/InP(0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxy

“…Towards saturation we can observe slightly increase in diameter of 46.2 nm and a height of 9.2 nm. The InAs QDs on InP(0 0 1) substrate mentioned in the literature also have height and diameter distribution 10-2 nm and 70-30 nm with density in a range of 3E9-3E10 cm −2 [20,21,[70][71][72][73][74]. In summary, we have seen three transition points i.e.…”

Current-injected light emission of epitaxially grown InAs/InP quantum dots on directly bonded InP/Si substrate

“…Figure 6 shows the schematic layer structure of four stacked (Ga)InAs QD layers, which is applicable for broad band LEDs. 27) The heights of the QDs in each layer were controlled to be 8, 5.5, 3, and 4 nm on the non-masked region of the substrate by changing the first cap layer (FCL) thickness, and the thickness of the InP second cap layer (SCL) was set to 22 nm. The Ga composition of the Ga x In 1¹x As buffer layer under the QDs was x = 0.47 for all layers, and the thickness was 1.4 nm.…”

Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics

“…Semiconductor nanowires (NWs) are promising building blocks for future photonic and electronic devices [1][2][3][4]. In recent years, InAs/InP core/shell NWs have attracted much attention because of the high electron mobility and surface passivation of InAs [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Crystal defect [15], optical performance [10], low temperature electron mobility [16], band structure [11,[18][19][20], and remote P-type doping [21] of InAs/InP core/shell NWs have been investigated.…”