Flat-topped emission with a spectral width greater than 500 nm was obtained from self-assembled Stranski-Krastanov (SK) InAs/InP quantum dots (QDs) grown by selective area low-pressure metal organic vapor phase epitaxy using a double-capping procedure. Selective area growth using an SiO 2 mask with narrow stripes was carried out to tailor a wide emission range for the QDs in sixteen arrayed waveguides. Each waveguide core contained three stacked QD layers with different QD heights and Ga content in the GaInAs buffer layer. An investigation was carried out into the optimum Ga content and QD height for increasing the emission intensity and obtaining equal intensity from each QD layer.

More than 400nm broadband luminescence was obtained from 3 layered InAs/InP QDs array waveguides. InAs QDs were grown by Stranski‐Krastanov grown mode using selective MOVPE growth and double cap procedure. The selective MOVPE was performed using 16 stripe mask array with a wide mask at one side of the array. The heights of the QDs were controlled vertically by changing the first‐cap layer thickness during the double‐cap procedure. Furthermore, we have tried to control the emission energy of QDs by changing the Ga composition of GaxIn1‐xAs buffer layer under the QDs. By using these techniques, we have fabricated the broadband emission devices. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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