InAs/InP QDs grown by selective MOVPE growth using double‐cap procedure for broadband LED improved p‐cladding layer

Abstract

More than 400nm broadband luminescence was obtained from 3 layered InAs/InP QDs array waveguides. InAs QDs were grown by Stranski‐Krastanov grown mode using selective MOVPE growth and double cap procedure. The selective MOVPE was performed using 16 stripe mask array with a wide mask at one side of the array. The heights of the QDs were controlled vertically by changing the first‐cap layer thickness during the double‐cap procedure. Furthermore, we have tried to control the emission energy of QDs by changing the Ga composition of GaxIn1‐xAs buffer layer under the QDs. By using these techniques, we have fabricated the broadband emission devices. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Flat-Topped Emission with Spectral Width above 500 nm from InAs/InP Quantum Dot Waveguide Array Light-Emitting Diode

“…In the previous device, emission from QDs grown on the high-Ga-content GaInAs buffer was very low. 8,9) To overcome this, in the present device, the Ga content was reduced from 0.55 to 0.47, and the FCL thickness was increased by 1 to 2 nm. This resulted in a higher emission at shorter wavelengths, although the emission wavelength became longer.…”

“…We previously reported the successful fabrication of QD waveguide array LEDs with a broad spectral output. 8,9) In the present paper, we describe improvements to the core structure that led to the realization of flat-topped emission with a spectral width of greater than 500 nm.…”