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More than 400nm broadband luminescence was obtained from 3 layered InAs/InP QDs array waveguides. InAs QDs were grown by Stranski‐Krastanov grown mode using selective MOVPE growth and double cap procedure. The selective MOVPE was performed using 16 stripe mask array with a wide mask at one side of the array. The heights of the QDs were controlled vertically by changing the first‐cap layer thickness during the double‐cap procedure. Furthermore, we have tried to control the emission energy of QDs by changing the Ga composition of GaxIn1‐xAs buffer layer under the QDs. By using these techniques, we have fabricated the broadband emission devices. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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More than 400nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs. IntroductionA broadband infrared semiconductor light sources is desirable for many applications, such as a wavelength division multiplexing system, infrared spectroscopy, sensing, metrology, and testing. To obtain a broadband emission of light, the wideband energy distribution of a semiconductor material is necessary. In the previous report [1], we have obtained a wideband electro luminesence from InAs/InP QDs using doublecap procedure [2] and selective MOVPE growth. By using a narrow stripe arrayed mask with a wide mask at one side of the array, we have controlled the emission wavelength in each array waveguide. And we have attempted to control the height of the QDs vertically by changing the cap layer thickness during the double-cap procedure. To obtain further broadband luminescence, we have controlled the strain under the QDs by changing the Ga composition of Ga x In 1-x As buffer layer.