2016
DOI: 10.1002/aelm.201500355
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Flexible 3D Graphene Transistors with Ionogel Dielectric for Low‐Voltage Operation and High Current Carrying Capacity

Abstract: In this paper, an ionogel‐gated flexible 3D graphene transistor made from graphene foam, consisting of a network of few layers graphene, is reported. The presented transistor, fabricated on thin, 28 μm parylene, flexible substrate, demonstrates low‐voltage operation (≤2.5 V) and exhibits 4.78 times higher current capacity than previously reported liquid‐gated 3D graphene transistor fabricated on glass substrate. This is also 26.72 times higher current capacity (93 mA at 2 V applied VD) than the equivalent long… Show more

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Cited by 19 publications
(15 citation statements)
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“…Ionic liquids, as with polymer material fillers, have garnered interest in recent years, due to their excellent properties, such as high dielectric permittivity, high conductivity, stability, nonvolatility, and nonflammability . Promising results relating to ionic liquids as fillers for enforcing polymer materials have been published.…”
Section: Introductionmentioning
confidence: 99%
“…Ionic liquids, as with polymer material fillers, have garnered interest in recent years, due to their excellent properties, such as high dielectric permittivity, high conductivity, stability, nonvolatility, and nonflammability . Promising results relating to ionic liquids as fillers for enforcing polymer materials have been published.…”
Section: Introductionmentioning
confidence: 99%
“…Doping ionogels with graphene in varying concentrations leads to condensed materials displaying higher conductivity. This underlying mechanism was attributed to decreased pore volume and internal surface area, which results in better interaction between ionogels and graphene . Most of these devices are fabricated using multistep and low‐yield processes such as free‐form and micromolding .…”
Section: D Graphene For Advanced Electronicsmentioning
confidence: 99%
“…53 Although the higher mobility was obtained in common CVD-graphene based devices, the poor current modulation (I on /I off < 10) was observed simultaneously. 36,37,54,55 The small I on /I off value is mainly caused by the large off-state current (I off ), which could lead to inevitable static power consumption. It is known that static power consumption is comparable to dynamic power in modern silicon chips or even become dominating in the future.…”
Section: Characterizationsmentioning
confidence: 99%