Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability

Zhou, Feng; Xu, Weizong; Jin, Yulei; Zhou, Tianyang; Ren, Fangfang; Zhou, Dong; Chen, Dunjun; Zhang, Rong; Zheng, Yi; Lu, Hai

doi:10.1109/ted.2022.3200629

Cited by 5 publications

(1 citation statement)

References 47 publications

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“…Pairing Equations (1) and (4), it can be inferred that the reliability problem of FCP is related to the properties of materials [ 10 , 12 , 22 , 23 , 24 , 25 , 26 ]. For finding the most suitable material, Taguchi’s experimental method was used [ 27 ].…”

Section: Models and Simulationmentioning

confidence: 99%

Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP

Liu

et al. 2023

Micromachines

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Gallium nitride (GaN) power devices have many benefits, including high power density, small footprint, high operating voltage, and excellent power gain capability. However, in contrast to silicon carbide (SiC), its performance and reliability can be negatively impacted by its low thermal conductivity, which can cause overheating. Hence, it is necessary to provide a reliable and workable thermal management model. In this paper, a model of a flip-chip packing (FCP) GaN chip was established, and it was assigned to the Ag sinter paste structure. The different solder bumps and under bump metallurgy (UBM) were considered. The results indicated that the FCP GaN chip with underfill was a promising method because it not only reduced the size of the package model but also reduced thermal stress. When the chip was in operation, the thermal stress was about 79 MPa, only 38.77% of the Ag sinter paste structure, lower than any of the GaN chip packaging methods currently in use. Moreover, the thermal condition of the module often has little to do with the material of the UBM. Additionally, nano-silver was found to be the most suitable bump material for FCP GaN chip. Temperature shock experiments were also conducted with different UBM materials when nano-silver was used as bump. It was found that Al as UBM is a more reliable option.

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Section: Models and Simulationmentioning

confidence: 99%

Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP

Liu

et al. 2023

Micromachines

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An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

et al. 2023

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Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices. Here we report avalanche and surge robustness in a heterojunction formed between the ultra-wide bandgap n-type gallium oxide and the wide-bandgap p-type nickel oxide. Under 1500 V reverse bias, impact ionization initiates in gallium oxide, and the staggered band alignment favors efficient hole removal, enabling a high avalanche current over 50 A. Under forward bias, bipolar conductivity modulation enables the junction to survive over 50 A surge current. Moreover, the asymmetric carrier lifetime makes the high-level carrier injection dominant in nickel oxide, enabling a fast reverse recovery within 15 ns. This heterojunction breaks the fundamental trade-off between robustness and switching speed in conventional homojunctions and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications.

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Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness

Zhou,

Chen

et al. 2024

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability

Cited by 5 publications

References 47 publications

Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP

Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness

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