Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

Wang, Wei; Dong, Yuan; Lee, Shuh-Ying; Loke, Wan-Khai; Lei, Dian; Yoon, S. F.; Liang, Gengchiau; Gong, Xiao; Yeo, Yee-Chia

doi:10.1364/oe.25.018502

Cited by 50 publications

(13 citation statements)

References 21 publications

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“…7. Notably, the relaxed Ge 0.928 Sn 0.072 photodetector achieves a responsivity of 0.102 A/W at 2 μm, which is larger than those of the photodetectors in previous reports [38], [49], [51], [52]. A brief summary is presented to explain this phenomenon.…”

Section: Numerical Simulations and Discussionmentioning

confidence: 65%

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Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection

et al. 2018

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In this paper, buffer-free germanium-tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal-oxide-semiconductor processing conditions. The experimental results demonstrate that Ge 0.928 Sn 0.072 film retains high crystallinity with few misfit dislocations formed at a relaxation degree of 91.5% after post-thermal annealing at 600°C. Moreover, numerical simulations demonstrate that the proposed photodetector can achieve a high responsivity of 0.102 A/W at 2 μm. This strategy can facilitate the fabrication of GeSn-based devices, which will contribute substantially to the development of group IV-based infrared optoelectronics.

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Section: Numerical Simulations and Discussionmentioning

confidence: 65%

“…The related optical parameters of relaxed GeSn are extracted from [45]- [48]. The refractive index n and extinction coefficient k of strained GeSn can be found in [49].…”

Section: Numerical Simulations and Discussionmentioning

confidence: 99%

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection

et al. 2018

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“…However, those characteristics are rather difficult to meet simultaneously within a single device. Most mature GeSn photodetector designs include simple p-i-n diodes in the waveguide-integrated [210,213] and free-space forms [214], MQW p-i-n photodiodes on Si [205,206,215] or Ge-oninsulator [216,217] substrates, p-n-p floating-based heterojunction phototransistors [218,219], pseudomorphic hetero-junction p-i-n diode with resonant cavity [207], and MQW APDs [220,221]. The opto-electrical performances of wavelength-extended Si-Ge photodetectors realizations still do not reach the same levels of Ge devices operating at standard fiber-optic telecommunication windows.…”

Section: Photodiodes Beyond Mainstream Wavebandsmentioning

confidence: 99%

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

et al. 2020

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Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

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“…The application of GeSn alloys in HPTs for fiber-optic telecommunication networks and MIR applications has been theoretically studied in recent works [27]- [30]. Recently, a two-terminal n-p-n GeSn HPT on Ge with Sn concentrations of 6.5% was fabricated for operation at 1550 nm and 2003 nm, which had an SR 10 times higher than conventional GeSn-based PDs [31]. Floating p-n-p GeSn HPTs on Si have also been recently demonstrated with an extended photodetection range up to 1940 nm and enhanced optical responsivity [32].…”

Section: Introductionmentioning

confidence: 99%

Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors

2020

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We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of Ge 1−x Sn x alloy in the base of our HPTs significantly shortens the emitter-to-collector transit time, leading to high cutoff frequency (f T) due to an increase in mobility. Furthermore, the Ge 1−x Sn x base extends the optical detection over a wide range (up to 2500 nm) due to the shrinkage of the bandgap energy caused by alloying with Sn. Additionally, spectral responsivity increases with Sn alloying due to the increased absorption coefficient. Our results show that f T and responsivity are strongly dependent not only on doping but also on temperature. The impact of temperature on the noise behavior of phototransistors was also analyzed for frequencies up to 100 GHz. As the temperature increased, the signal-to-noise ratio (SNR) decreased; however, spectral responsivity significantly improved. The high SNR, responsivity, and f T values of the GeSn HPT make it a potential candidate for future Si-based uncooled high-speed MIR photodetection.

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Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

Cited by 50 publications

References 21 publications

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors

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