1999
DOI: 10.1063/1.479677
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Fluorine atom abstraction by Si(100). I. Experimental

Abstract: In the interaction of low energy F 2 with Si͑100͒ at 250 K, a dissociative chemisorption mechanism called atom abstraction is identified in which only one of the F atoms is adsorbed while the other F atom is scattered into the gas phase. The dynamics of atom abstraction are characterized via time-of-flight measurements of the scattered F atoms. The F atoms are translationally hyperthermal but only carry a small fraction ͑ϳ3%͒ of the tremendous exothermicity of the reaction. The angular distribution of F atoms … Show more

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Cited by 27 publications
(45 citation statements)
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“…[15][16][17] For example, the reaction probability of single F abstraction of F 2 on Si͑100͒ increases from ϳ0.1 at zero F coverage ͑ F ͒ to a peak value of ϳ0.3 at F Х 0.5 ML and then falls to 0 at saturation coverage. Before Su-A or Su-B bonds are formed, in either of the two chemisorption mechanisms, fragment A or B can readily interact not only with the substrate but also with other fragments or adsorbates, which are previously adsorbed fragments.…”
Section: Introductionmentioning
confidence: 97%
“…[15][16][17] For example, the reaction probability of single F abstraction of F 2 on Si͑100͒ increases from ϳ0.1 at zero F coverage ͑ F ͒ to a peak value of ϳ0.3 at F Х 0.5 ML and then falls to 0 at saturation coverage. Before Su-A or Su-B bonds are formed, in either of the two chemisorption mechanisms, fragment A or B can readily interact not only with the substrate but also with other fragments or adsorbates, which are previously adsorbed fragments.…”
Section: Introductionmentioning
confidence: 97%
“…Molecular F 2 has been recently shown to dissociate on Si1002 1 by an atom abstraction mechanism [1][2][3]. This mechanism is distinct from that of classic dissociative chemisorption because a bond of an incident molecule is cleaved upon formation of only a single bond to the surface.…”
mentioning
confidence: 99%
“…The velocities of the incident and scattered beams are determined by cross correlation time-of-flight (TOF) methods. The beam is incident at 20 from the normal on a p-type Si(100) crystal that is held at 150 K. The Si surface purity, structure, and fluorine coverage are determined as previously described [2,8,9].…”
mentioning
confidence: 99%
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