Fluorine‐Free Nanoporous Low‐<i>k</i> Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry

Cao, Liangliang; Wu, Yunwen; Hang, Tao; Li, Ming

doi:10.1002/admi.202101127

Cited by 5 publications

(2 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At this pulse voltage, after the electrografting reaction for 10 min, the film is characterized by ATR-IR, and the obtained spectrum is shown in Figure b, which shows the structural characteristics of the chemical adsorption film . The spectrum shows that Si–O–Si has a characteristic absorption peak at 1110 cm –1 , which corresponds to the peak position in the literature − and comparison experiment (Figure S2), indicating that POSS is successfully grafted into the film without being damaged. In some one-step chemical grafting reactions involving hydrofluoric acid (HF), ,, HF will decompose the POSS core, resulting in no Si–O–Si peak observed in the infrared spectrum, which is also the advantage of electrochemical reduction of diazonium salts.…”

Section: Resultsmentioning

confidence: 65%

Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

Cao

Hang

et al. 2022

Langmuir

Self Cite

View full text Add to dashboard Cite

Covalent grafting of dielectric films containing polyhedral oligomeric silsesquioxane (POSS) on the surface of Cu(111) is performed by a one-step electrochemical reduction of diazonium salts. This method is efficient and economic and performs in a proton-polar solvent of deionized water and tetrahydrofuran (THF), where the monomer employs an octavinylsilsesquioxane (OVS) containing a POSS core. The eight vinyl bonds contained in OVS are used to participate in aryl radical-initiated polymerization reactions to form films. The formed film is dense and covers the copper surface completely and uniformly. The thickness of the film can be controlled by adjusting the reaction time. The components of the films are mainly polynitrophenyl (PNP) or polyaminophenyl (PAP) as well as poly(octavinylsilsesquioxane) (POVS), and the POVS content could be adjusted by the applied voltage. The introduction of POSS prevents the copper surface from being oxidized and often gives the film good properties such as good dielectric properties, mechanical properties, and thermal properties. In addition, the presence of Cu–O–C and Cu–C bonds between the film and copper interface is confirmed at different film thicknesses by X-ray photoelectron spectroscopy (XPS), which allowed the construction of covalent bonds between metal and nonmetal, further enhancing the bonding between the film and copper. Organic films prepared by electrochemical reduction of diazonium salts using OVS as a monomer will have potential significance for the future development of the electronics industry.

show abstract

Section: Resultsmentioning

confidence: 65%

Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

Cao

Hang

et al. 2022

Langmuir

Self Cite

View full text Add to dashboard Cite

show abstract

“…In addition, the above organic films obtained using porous materials and fluorination are still combined with the silicon substrate through physical contact by the spin coating method. For the preparation process of the organic insulating film on the surface of a silicon substrate, compared with the spin coating method , and electrochemical grafting method, , the chemical grafting method via aryl diazonium salts − has better shape retention, can realize covalent bond with the Si substrate, and is not limited by the resistivity of the silicon substrate, so it has more application prospects. The chemical grafting method can be suitable for the preparation of dielectric films with a high aspect ratio and high-density electronic interconnections .…”

Section: Introductionmentioning

confidence: 99%

Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

Cao

Zheng

Xue

et al. 2022

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

In the current electronics industry, chip interconnect density is continuously increasing and high-frequency communication is further developed. To effectively reduce the adverse effects such as resistance−capacitance delay and signal crosstalk, it is urgent to develop organic dielectric films with lower dielectric constants. In this study, chemical grafting method via aryl diazonium chemistry is used to deposit polymethylmethacrylate (PMMA) films on the porous Si surface. The differences in surface morphology and structure of thin films on flat silicon and porous silicon are studied. In addition, we study the effect of substrate porosity on the dielectric constant, and finally obtain porous PMMA films with dielectric constants ranging from 1.9 to 1.5. Compared with the PMMA film prepared on flat silicon, the film prepared on porous silicon has the advantages of faster growth rate, larger thickness adjustable range, stronger adhesion to the substrate, and lower dielectric constant. The dielectric constant of uniform porous PMMA films obtained in this experiment is further decreased compared with inorganic SiO 2 (ε 1 = 3.9) and dense PMMA films (ε 1 = 2.8−2.4). And the dielectric loss of PMMA films also decreases with the increase of porosity. This is a method for preparing porous polymers, which is more suitable for in situ thin film preparation in high-density electronic interconnections than traditional methods for preparing porous polymers. Theoretically, this method can be used to prepare other vinyl organic films on porous silicon surface, making it have better application prospects in the field of higher-frequency communication in the future.

show abstract

Atomic Regulation of Metal–Organic Framework Thin Film for Low-k Dielectric

Cao,

Song,

Ren

et al. 2024

Chem. Mater.

View full text Add to dashboard Cite

With the development of integrated circuit miniaturization, the RC delay caused by the interconnect resistance of metal wires and the capacitance of interlayer dielectric materials limits the high integration and miniaturization of electronic devices. As a promising low-k dielectric material, metal−organic frameworks (MOFs) can effectively alleviate this problem. In this work, we report an atomic regulation strategy of ultralow k MIL-53 film, achieved by converting an Al 2 O 3 seed layer deposited via atomic layer deposition (ALD) and subsequently modifying through atomic layer infiltration (ALI). Thanks to the linear relationship between the thickness of the MIL-53 film and the Al 2 O 3 seed layer prepared by ALD, precise nanoscale control of the MIL-53 films was realized. To meet both mechanical and dielectric property requirements, ALI modification is introduced, effectively regulating Young's modulus and hardness of MIL-53 films from 19.5 and 0.17 GPa to 29.1 and 0.36 GPa, respectively, while the dielectric constant can be tuned from 1.93 to 2.59. The reconciliation of these properties is achieved by regulating the porosity of the MIL-53 framework through the additional Al−O clusters during the ALI. Furthermore, the superhydrophobic properties (140.7°) and the nearly constant dielectric constant after 9 months of aging reflect its potential as a dielectric insulating material. The proposed preparation and modification strategy of MOF films based on atomic regulation has broad potential for application in low-k interconnect integrated circuits.

show abstract

Fluorine‐Free Nanoporous Low‐k Dielectric Film Covalently Grafted on Si via Aryldiazonium Chemistry

Cited by 5 publications

References 43 publications

Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

Atomic Regulation of Metal–Organic Framework Thin Film for Low-k Dielectric

Contact Info

Product

Resources

About