Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer

Abstract

Articles you may be interested inElectric field induced metastable ferroelectric phase and its behavior in (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric single crystal near morphotropic phase boundary Appl. Phys. Lett. A 60nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming Appl. Phys. Lett. 99, 182902 (2011); 10.1063/1.3657413 The effect of band offset on the retention properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Dy 2 O 3 , Y 2 O 3 ) -semiconductor capacitors and field effect transistors Appl. Phys. Lett. 91, 122902 (2007); 10.1063/1.2784203 Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects Appl. Phys. Lett. 84, 4553 (2004); 10.1063/1.1759069The effects of shock stress and field strength on shock-induced depoling of normally poled PZT 95/5 AIP Conf.

Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor

“…These values are comparable with those of the PZT films deposited on Si, even though a lower electric field is applied here. 15,16 The polarization supports that the resultant PZT thin film indeed exhibits good ferroelectric property. Figure 4 shows the leakage current versus applied voltage of the MFIS capacitor compared with the Schottky diode based on the same diamond epilayer grown on the p + -diamond substrate.…”

Ferroelectric properties of c-oriented YMnO3 films deposited on Si substrates

“…On the other hand, a metal-ferroelectric-insulatorsemiconductor field effect transistor ͑MFISFET͒ structure has also been demonstrated using various buffer layers such as CeO 2 and MgO. [7][8][9][10][11] The applied voltage cannot be effectively used for polarization, however, due to the existence of a buffer layer with a dielectric constant lower than that of typical ferroelectric films. Previously, we have proposed the use of RMnO 3 ͑R: rare earth elements͒ thin films for nonvolatile memories.…”

Enhanced memory window of Au/BaTiO3/SrTiO3/Si(001) MFIS structure with high c-axis orientation for non-volatile memory applications

“…Among these materials, STO perovskite oxide is one of the best candidate materials for the insulating buffer layer because of its excellent barrier property, good thermal stability, low leakage current, and high dielectric constant. On the other hand, a wide class of ferroelectric materials such as SrBi 2 Ta 2 O 9 , YMnO 3 , BaTiO 3 (BTO), PbZrTiO 3 , and Bi 2 VO 5.5 has been studied concurrently with the insulating buffer layers [10][11][12][13][14]. When their properties are compared, the BTO perovskite oxide has many advantages over other ferroelectric materials, including low crystallization temperature, high fatigue endurance, good compatibility with integrated circuits, and low environmental load [15].…”