Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor

Liao, Meiyong; Imura, Masataka; Fang, Xiaosheng; Nakajima, Kiyomi; Chen, Guang-Chao; Koide, Yasuo

doi:10.1063/1.3156030

Cited by 17 publications

(5 citation statements)

References 18 publications

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“…The origin for the V g -I ds counterclockwise hystersis is possibly due to holes trapping at the Al 2 O 3 / diamond interface, or the deficiency of Pb in the initial PZT layer near the STO layer due to interface diffusion. 9 The utilization of the MPIS-FET to MEMS pressure sensors requires that the channel conductivity should be controlled by the gate bias, which is really achieved in the present work. The external pressure applied on the gate will induce a polarization of the PZT film, consequently, an additional bias on the gate.…”

Section: Metal-piezoelectric-insulator-diamond Fetmentioning

confidence: 90%

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Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Liao

Gotoh

Tsuji

et al. 2010

Journal of Applied Physics

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The combination of piezoelectric materials and single crystal diamond offers the opportunity for the development of multifunctional micromachined devices under extreme conditions. In this work, the authors report the structural, electrical, optical, and dielectric properties of Pb͑Zr 0.52 ,Ti 0.48 ͒O 3 ͑PZT͒ thin films integrated on single crystal diamond ͑100͒ substrates. The corresponding field effect transistor based on the metal-piezoelectric-insulator-semiconductor ͑MPIS͒ structure was fabricated on a homoepitaxial p-type diamond layer grown on a type-Ib diamond substrate. Different intermediate layers were deposited on single diamond substrates prior to the PZT films growth in order to achieve the best polarization properties. It was observed that the utilization of an Al 2 O 3 buffer layer followed by a SrTiO 3 seed layer favored the formation of a single perovskite PZT phase. Transmission electron diffraction patterns revealed that the PZT films included an initial layer at the SrTiO 3 / PZT interface followed by a well crystallized layer. The PZT film grown on SrTiO 3 / Al 2 O 3 / diamond exhibited much better in-plane polarization than that of the PZT film on Al 2 O 3 / diamond. The photoresponse behavior revealed that carriers trapping effect was trivial in the PZT film. The channel electrical conductivity of the MPIS field effect transistor was successfully modulated by the gate bias.

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Section: Metal-piezoelectric-insulator-diamond Fetmentioning

confidence: 90%

“…The Al 2 O 3 layer is known to act as an efficient diffusion barrier between the element Pb and diamond. 9 The cross-section TEM and SAD measurements were performed on the PZT film deposited on the STO ͑25 nm͒ / Al 2 O 3 ͑15 nm͒ / diamond substrate after annealing, as shown in Fig. 2.…”

Section: A Crystalline Structure and Compositionmentioning

confidence: 99%

Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Liao

Gotoh

Tsuji

et al. 2010

Journal of Applied Physics

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“…The typical memory devices are built on the base of the capacitor [5,53,54] or FeFET [55,56]. The former model consists of a thin ferroelectric film between two conductive electrodes, and the latter one is similar to a metal-oxide-semiconductor field-effect transistor (MOSFET).…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric memory based on nanostructures

Liu

Chen

et al. 2012

Nanoscale Res Lett

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In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs.

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“…The hysteresis behavior is very similar to that of the MIS diode using Pb(Zr,Ti)O 3 /Al 2 O 3 stacked insulator. 24 After RTA, the hysteresis nearly vanished (Fig. 5(b)).…”

mentioning

confidence: 96%

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

Cheng

Sang

Liao

et al. 2012

Applied Physics Letters

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Articles you may be interested inDielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range J. Appl. Phys. 112, 094104 (2012); 10.1063/1.4761980 Physical and electrical characteristics of the high-k Ta 2 O 5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon Appl. Phys. Lett. 96, 112901 (2010); 10.1063/1.3334725 Thermal stability of rare-earth based ultrathin Lu 2 O 3 for high-k dielectrics High permittivity quaternary metal ( Hf Ta Ti O x ) oxide layer as an alternative high-κ gate dielectric

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Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor

Cited by 17 publications

References 18 publications

Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Ferroelectric memory based on nanostructures

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

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