Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Abstract

The combination of piezoelectric materials and single crystal diamond offers the opportunity for the development of multifunctional micromachined devices under extreme conditions. In this work, the authors report the structural, electrical, optical, and dielectric properties of Pb͑Zr 0.52 ,Ti 0.48 ͒O 3 ͑PZT͒ thin films integrated on single crystal diamond ͑100͒ substrates. The corresponding field effect transistor based on the metal-piezoelectric-insulator-semiconductor ͑MPIS͒ structure was fabricated on a homoepitaxial p-type diamond layer grown on a type-Ib diamond substrate. Different intermediate layers were deposited on single diamond substrates prior to the PZT films growth in order to achieve the best polarization properties. It was observed that the utilization of an Al 2 O 3 buffer layer followed by a SrTiO 3 seed layer favored the formation of a single perovskite PZT phase. Transmission electron diffraction patterns revealed that the PZT films included an initial layer at the SrTiO 3 / PZT interface followed by a well crystallized layer. The PZT film grown on SrTiO 3 / Al 2 O 3 / diamond exhibited much better in-plane polarization than that of the PZT film on Al 2 O 3 / diamond. The photoresponse behavior revealed that carriers trapping effect was trivial in the PZT film. The channel electrical conductivity of the MPIS field effect transistor was successfully modulated by the gate bias.

Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

“…Higher sweep voltage results in enhanced memory window due to higher electric field stored in the PZT film. 9 Further, we obtained continuous enhancement in the memory window with annealing temperature in the temperature range of 400-600 C for both the buffer layers. It appears that the ferroelectricity of the film is improved which increases the volume fraction of the ferroelectric tetragonal phase.…”

“…Thin films of Ti rich PZT also known as PZT(35/65) having the ability to store large amount of charges in small region in lower coercive field show higher remnant polarization, which makes it an attractive material for the gate in FeFET. [6][7][8][9][10][11] However, it is difficult to get the good interface between the PZT and the Si substrate due to the fact that most ferroelectric materials easily react with Si to form a non-ferroelectric interfacial layer even at low annealing temperature (<500 C) thus degrading the device integrity. 12 Further, the diffusion of Pb from the PZT to the channel layer of FeFET is of great concern in VLSI devices.…”

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

“…Oxide perovskite materials, such as AMnO 3 , [11,67] ATiO 3 , [6,12,14,[68][69][70][71][72][73][74] A 2 CuO 4 , [75] ATaO 3 , [76,77] and ASnO 3 , [15] can be used as active layers in FETs. The electron mobility values measured in a FET device for oxide perovskite materials are summarized in Figure 2a.…”

“…ATiO 3 compounds, such as STO, [6,14,[68][69][70][71][72]74] La-doped STO, [12] and Pb(Zr 0.52 Ti 0.48 )O 3 (0.52-doped PZT), [73] can be applied as semiconductors in FETs. STO is also a typical model system for the investigation of the electronic structure of transition metal oxides with perovskites crystal structures.…”