Formation Mechanism of Atomically Flat Si(100) Surface 
by Annealing in Ar/H2 Ambient

Kudoh, Sohya; Ohmi, Shun–ichiro

doi:10.1007/s11664-017-5975-x

Cited by 9 publications

(11 citation statements)

References 29 publications

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“…10,15,21) The equivalent oxide thickness (EOT) was calculated as 7.0 nm for HfO 2 TL and 5.2 nm for HfON TL MONOS structure. [14][15][16][17][18][19][20][21] SiO 2 has a lower relative dielectric constant (ε SiO2 ∼ 3.9) than HfO 2 (ε HfO 2 ∼ 20) and HfON (ε HfON ∼ 21). 21,22) Previously, 2-bit/cell operation of HfO 2 TL was investigated at a V PGM /t PGM of 6 V/2 ms, with V DS = 1.5 V. 10,19) The calculated effective field stress in the TL is 8.6 MV/cm at V PGM of 6 V in the case of HfO 2 TL.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, we have reported the excellent electrical characteristics of a Hf-based MONOS structure formed in situ by ECR plasma sputtering with a HfO 2 and HfON tunneling layer (TL). 10,[14][15][16][17][18][19][20][21] The composition of each layer was reported, and it is designed using the reported results, previously. 10) In the case of HfO 2 , the SiO 2 interfacial layer (IL) is formed between the TL and Si substrate which increased the equivalent oxide thickness (EOT) and degraded operation speed.…”

Section: Introductionmentioning

confidence: 99%

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Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO₂ and HfON tunneling layer

Pyo¹,

Ihara²,

Zhang³

et al. 2022

Jpn. J. Appl. Phys.

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This paper investigated the multi-level 2-bit/cell operation utilizing a Hf-based metal/oxide/nitride/oxide/silicon (MONOS) nonvolatile memory (NVM) device with a HfO2 and HfON tunneling layer (TL). The 2-bit/cell operation is realized by utilizing the localized charge injection method. It was found that drain-current–gate-voltage (I D–V G) characteristics of the programmed states were affected by asymmetry localized in a trapped location along the channel direction. Moreover, the amount of localized trapped charge is strongly affected by drain-source voltage (V DS) in the case of HfON TL. HfON TL shows distinguishable separated all programmed states compared to HfO2 TL. Finally, it was found that all programmed states of HfO2 and HfON TL show similar characteristics according to the channel length and width (L/W) of 2–10/15–90 μm.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO₂ and HfON tunneling layer

Pyo¹,

Ihara²,

Zhang³

et al. 2022

Jpn. J. Appl. Phys.

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“…To generates atomically flat surfaces ultra-high vacuum techniques are generally required. [26,27] The removal of the oxide may be monitored by standard surface analytical methods (Table 1).…”

Section: The Silicon Surfacementioning

confidence: 99%

Functionalization of Oxide‐Free Silicon Surfaces for Biosensing Applications

Henriksson

Neubauer

Birkholz

2021

Adv Materials Inter

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As an alternative to standard silicon biofunctionalization protocol based on alkoxysilanes that bind to SiO2 on oxidized silicon substrates, several protocols to form bifunctional interlayers that directly bind to the silicon surface via a strong SiC bond have been developed during the last decades. These interlayers are more stable, and the lack of an insulating layer between the substrate and the interlayer reduces electric noise in biosensor devices. SiC monolayers are not yet regularly applied as the protocols are more complex and generally require an inert gas atmosphere. However, a variety of applications and new methods to form bifunctional SiC interlayers are recently developed. Here, the role these innovative protocols and interlayers play in biofunctionalization of silicon surfaces is reviewed and their applications in electrochemical, microelectromechanical, and optical biosensing are reported. From the analysis of the current situation, it can be concluded that the advantageous properties offered with this approach in many cases more than outweigh the additional processes to form SiC bonded interlayers and the approach is predicted to expand the applications of future silicon‐based biosensors.

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“…[3][4][5][6][7][8][9][10] We have reported the Hf-based MONOS NVM with high-k HfO 2 and HfN 1.1 dielectrics. [11][12][13][14][15][16][17] The Hf-based MONOS structures were fully in situ formed to improve the interface property by the reactive sputtering utilizing Hf target. The MONOS structures are consisted from HfN 0.5 gate electrode, HfO 2 blocking layer (BL), HfN 1.1 charge trapping layer (CTL), HfO 2 tunneling layer (TL), and we have demonstrated the multibit/cell operation.…”

Section: Introductionmentioning

confidence: 99%

“…Tang et al reported that the multi CTL formed by the multi Zr silicate layers to improve the MONOS characteristics. 16) The multi CTL was fabricated by changing the Zr and Si contents in each Zr silicate layer. The trap sites for the injected electrons were increased in the CTL, and the controllability of flat-band voltage (V FB ) in the C-V characteristics was improved.…”

Section: Introductionmentioning

confidence: 99%

HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

Ohmi¹,

Horiuchi²,

Morita³

et al. 2021

Jpn. J. Appl. Phys.

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The effect of HfN multi charge trapping layers (CTLs) on the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory characteristics was investigated to improve the threshold voltage (V TH) controllability. The Hf-based MONOS structure with HfN1.3/HfN1.1/HfN1.3/HfN1.1 4-layer CTL realized precise control of flat-band voltage (V FB) and V TH compared to the Hf-based MONOS with HfN1.1 1-layer CTL. The hysteresis width after the program operation was markedly decreased which was originated from the stable trap site formation at the interface of the multi CTL. The retention and fatigue characteristics were found to be remarkably improved for the Hf-based MONOS structure with HfN multi CTL.

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Formation Mechanism of Atomically Flat Si(100) Surface by Annealing in Ar/H2 Ambient

Cited by 9 publications

References 29 publications

Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO₂ and HfON tunneling layer

Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO₂ and HfON tunneling layer

Functionalization of Oxide‐Free Silicon Surfaces for Biosensing Applications

HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

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Formation Mechanism of Atomically Flat Si(100) Surface by Annealing in Ar/H2 Ambient

Cited by 9 publications

References 29 publications

Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO2 and HfON tunneling layer

Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO2 and HfON tunneling layer

Functionalization of Oxide‐Free Silicon Surfaces for Biosensing Applications

HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

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Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO₂ and HfON tunneling layer

Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO₂ and HfON tunneling layer