Formation of p-type ZnO film on InP substrate by phosphor doping

Bang, Kyu Hyun; Hwang, D. K.; Park, Min-Chul; Ko, Young-Hwan; Yun, Ilgu; Myoung, Jae Min

doi:10.1016/s0169-4332(03)00151-x

Cited by 82 publications

(29 citation statements)

References 14 publications

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“…Experimentally, both P 2 O 5 and Zn 3 P 2 have been extensively used for fabrication of p-type ZnO [60][61][62][63][64][65][66][67][68][69][70][71][72]. Kim et al [65] reported that the as-grown phosphorus-doped ZnO by using a P 2 O 5 source possessed an n-type conductivity.…”

Section: Phosphorus Dopingmentioning

confidence: 99%

ZnO Doping and Defect Engineering—A Review

Xiu

Joshi

et al. 2015

Semiconductor Materials for Solar Photovoltaic Cells

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Section: Phosphorus Dopingmentioning

confidence: 99%

ZnO Doping and Defect Engineering—A Review

Xiu

Joshi

et al. 2015

Semiconductor Materials for Solar Photovoltaic Cells

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“…In the meantime, As-doped p-type ZnO has been produced by means of pulsed laser deposition 7,[9][10][11][12] , hybrid beam deposition 13,14 , evaporation and sputtering 15 , ion implantation 16,17 , radiofrequency (RF) magnetron sputtering 18 , and metal-organic chemical vapor deposition (MOCVD) 19 , and devices include ultraviolet (UV) 14,17 and visual-infrared light emitting diodes (LEDs) 19 . Succesful doping methods for P include excimer laser processing 8 , diffusion 20,21 , RF sputter deposition [22][23][24][25][26] , molecular beam epitaxy (MBE) 27 , MOCVD 28 , and laser ablation 29 . However, so far mostly rectifying diodes have been demonstrated from p-ZnO:P 8,21,24,25 and only weak electroluminescence in the visible 8 .…”

Section: Introductionmentioning

confidence: 99%

Lattice location of the group V elements Sb, As, and P in ZnO

Wahl¹,

Correia

Mendonça³

et al. 2010

Oxide-Based Materials and Devices

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Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes 124 Sb, 73As and 33 P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. The lattice site preference is understandable from the relatively large ionic size of the heavy mass group V elements. Unfortunately the presented results cannot finally settle the interesting issue whether substitutional Sb, As or P on oxygen sites or Sb Zn −2V Zn , As Zn −2V Zn or P Zn −2V Zn complexes (as suggested in the literature) are responsible for the acceptor action. However, the fact that the implanted group V ions prefer the substitutional Zn sites is clearly a strong argument in favour of the complex acceptor model, while it discourages the notion that Sb, As and P act as simple "chemical" acceptors in ZnO.

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“…However, the obtained p-type ZnO films are commonly unstable and unreproducible [9][10][11]. Meanwhile, several research groups have recently reported p-type conductivity in ZnO with exceptionally large-size-mismatched dopants such as P [12][13][14], As [15], and Sb [16]. Interestingly, phosphorusdoped p-type ZnO films showed excellent stability and reproducibility.…”

Section: Introductionmentioning

confidence: 99%

“…By far, the most reported phosphorus-doped ZnO films are deposited by frequency sputtering [13,14], and the p-type conduction can only be achieved after an annealing treatment. However, there are few reports about the fabrication of phosphorus-doped p-type ZnO films by metalorganic chemical vapor deposition (MOCVD) method, which has special advantages such as large scaling and reproduction.…”

Section: Introductionmentioning

confidence: 99%

Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Wang

et al. 2008

Front. Optoelectron. China

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Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O 2 , and P 2 O 5 powders are used as reactant and dopant sources. The ptype ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 V?cm, a hole concentration of 1.61 6 10 18 cm 23 , and a Hall mobility of 0.838 cm 2 ?(V?s) 21 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the ptype characteristics of the films.

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Formation of p-type ZnO film on InP substrate by phosphor doping

Cited by 82 publications

References 14 publications

ZnO Doping and Defect Engineering—A Review

ZnO Doping and Defect Engineering—A Review

Lattice location of the group V elements Sb, As, and P in ZnO

Growth of phosphorus-doped p-type ZnO thin films by MOCVD

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