Four‐Terminal Perovskite/Copper Indium Gallium Selenide Tandem Solar Cells: Unveiling the Path to >27% in Power Conversion Efficiency

Abstract

Over the past decade, the impressive progress in power conversion efficiency (PCE) of organometallic halide perovskite solar cells (PSCs), coupled with their ready integration into tandem solar cells, has led them to approach PCEs of 30% for tandem solar cells with a silicon bottom subcell. However, the complementary technology of perovskite/copper indium gallium selenide (CIGS) tandem solar cells has been thus far unable to reach similar efficiency values. Herein, a further advance in the efficiency of 4T perovskite/CIGS tandems is demonstrated, increasing the PCE up to 27.3% via systematic optimization of the top semitransparent PSC. Improvements in light management through the optimization of anti‐reflection coatings, coupled with the development of transparent conductive oxides that incur very low parasitic absorption are reported. It is revealed that both are crucial for maximizing efficiency and, by utilizing additional optical simulations, a detailed loss analysis that enables us to outline a path toward approaching 30% PCE for 4T perovskite/CIGS tandem devices is developed.

A framework for comparing the energy production of photovoltaic modules using 2-, 3-, and 4-terminal tandem cells

“…Figure 8. (a) External quantum efficiency of a generic tandem example (s-type GaInP/GaAs) [21] where the best configuration is not immediately apparent from sub-cell data. The JV model parameters are listed in Figure S2c, but resistive and optical shadow losses are omitted.…”

“…Studies investigating optical transmission losses require careful analysis specific to the exact tandem cell architecture being considered; examples of this can be found elsewhere. [18][19][20][21] It is also worth noting that the quality of the subcells used in a tandem cell impacts any performance comparison of 2T, 3T, and 4T devices, so the conclusions drawn from the examples shown here are very specific to the subcells used. The methods shown here are completely material agnostic, and can be applied to any set of subcells to reach conclusions for any subcell combination of interest, including all associated losses.…”

“…Studies investigating optical transmission losses require careful analysis specific to the exact tandem cell architecture being considered; examples of this can be found elsewhere. 18–21…”

Charge-Carrier Dynamics of Evaporated Bismuth-Based Chalcogenide Thin Films Probed with Time-Resolved Microwave Conductivity

“…5−8 Furthermore, it is also required that the constituents utilized be highly abundant and weakly toxic. 1 Currently, the established chalcogenide semiconductors mainly include copper indium gallium selenide (CIGS) 9,10 and CdTe, 11,12 while other options also emerged, such as copper zinc tin sulfoselenide (CZTSSe), 13,14 Sb 2 (S, Se) 3 , 15−17 Pb(S, Se), 18,19 AgBiS 2 , 20,21 Bi 2 S 3 , 5,22,23 and others. 24−27 In recent years, there has been a plethora of potential applications based on these chalcogenides, spanning from the advances of nextgeneration thin-film photovoltaics, 20,28,29 photodetectors, 30,31 and phototransistors 22,32 to photocatalysis.…”

“…The essential requirements for photovoltaic materials include a suitable bandgap (ideally in the range of 1.0–1.5 eV), a high absorption coefficient, a large carrier mobility, and a long minority carrier lifetime. − Furthermore, it is also required that the constituents utilized be highly abundant and weakly toxic . Currently, the established chalcogenide semiconductors mainly include copper indium gallium selenide (CIGS) , and CdTe, , while other options also emerged, such as copper zinc tin sulfoselenide (CZTSSe), , Sb 2 (S, Se) 3 , − Pb­(S, Se), , AgBiS 2 , , Bi 2 S 3 , ,, and others. − In recent years, there has been a plethora of potential applications based on these chalcogenides, spanning from the advances of next-generation thin-film photovoltaics, ,, photodetectors, , and phototransistors , to photocatalysis. , The exceptional versatility of these materials renders them exceedingly promising for a diverse range of technological advancements. In particular, bismuth-based chalcogenide semiconductors have attracted considerable attention with reported enhancements in their optoelectronic properties.…”