Frequency-dependent suppression of field-induced polarization rotation in relaxor ferroelectric thin films

Kim, Jieun; Meyers, D.; Kumar, Abinash; Fernández, Abel; Velarde, Gabriel; Tian, Zishen; Kim, Jong-Woo; LeBeau, James M.; Ryan, Philip; Martin, Lane W.

doi:10.1016/j.matt.2021.04.017

Cited by 7 publications

(6 citation statements)

References 31 publications

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“…It is worth noting that although the PMNPT thin films exhibit high quality compared with previous studies processing similar thickness, [ 24,54 ] their dielectric constants are still one order of magnitude lower than those in bulk single crystals ( ε 0 = 20 000–28 000 for x = 0–0.32). [ 16–18,46 ] While similar reduced dielectric values had been reported previously in coherently strained PMN‐0.32PT thin films grown on rare‐earth scandate single crystal substrates, [ 54,55 ] which suggests that the suppression of dielectric response observed in thin‐film version could be intrinsic rather than due to the extrinsic effect, such as passive interfacial layer.…”

Section: Resultssupporting

confidence: 71%

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg_1/3Nb_2/3)O₃ − xPbTiO₃ Epitaxial Thin Films

Shao

Huang

et al. 2023

Advanced Physics Research

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Thin ferroelectric layers are capable of generating large dielectric and electromechanical responses at relatively low voltages, thus can be utilized in various applications including energy storage, energy harvesting, sensors, and actuators. Among ferroelectrics, relaxor ferroelectrics (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 are particularly interesting due to their superior dielectric and piezoelectric properties. However, dielectric and piezoelectric responses of the ferroelectric thin films are significantly suppressed relative to their bulk counterparts. The physical mechanism of the properties degradation still remains elusive, which greatly hinders their technological applications. Herein, this work systematically investigates the dielectric nonlinearity and the relationship between composition and intrinsic/extrinsic contributions of high‐quality (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 epitaxial thin films (x = 0, 0.1, 0.32) fabricated by pulsed laser deposition. Through the Rayleigh analysis, it is found that the suppression of domain wall motion by substrate clamping is the main cause of thin film performance degradation and is further confirmed by continuous application of background dc bias to extract the dielectric response's intrinsic and extrinsic contributions. This work will pave the way for practical applications of (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 thin films in energy storage and electromechanical devices.

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Section: Resultssupporting

confidence: 71%

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg_1/3Nb_2/3)O₃ − xPbTiO₃ Epitaxial Thin Films

Shao

Huang

et al. 2023

Advanced Physics Research

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“…Through the analysis of positions and intensities of peaks in diffraction patterns, XRD and ND provide information about the crystalline symmetry, lattice parameters, as well as atomic positions and occupancies. , This information can be further refined by employing techniques such as the Rietveld method . In recent years, XRD and ND have advanced to achieve higher resolutions, increased energies, and compatibilities with in situ characterizations. − High-energy X-rays, characterized by their short wavelengths (<0.08 nm or 0.8 Å), can effectively improve the resolution. For instance, for pure PbTiO 3 , Muhtar Ahart et al used high-pressure in situ XRD to confirm the emergence of morphotropic phase boundaries in ferroelectrics by tracking the evolutions of the lattice strain and symmetry .…”

Section: Characterizations Of Lattice Structures and Strainsmentioning

confidence: 99%

“…In situ electrical and mechanical TEM images revealed that the mixed phases were completely converted to pure R or T phases, through the movement of phase boundaries between both phases. Furthermore, by finely controlling the strain levels, mixed M A and M C phases were stabilized in the strained PbMgNbO 3 –PbTiO 3 relaxer film, which could be considered as being a transient state only attained by stimulating electrical films and their bulk counterparts. , During electric field–induced M A –M C transitions, inclined and elongated polar nanodomains coupled with simultaneous polarization rotations contribute to the strong electromechanical response . For chemical pressure–modulated MPBs, e.g., (Bi 0.86 ,Sm 0.14 )FeO 3 films, the piezoelectric coefficient ( d 33 ) increased by 50% to 110 pm V –1 compared to that of the pure (nonsubstituted) BiFeO 3 film.…”

Section: Strain Engineering In Ferroelectric-based Applicationsmentioning

confidence: 99%

Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond

Li,

Deng,

Liu

et al. 2024

Chem. Rev.

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Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.

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“…In 0.68PbMg 1/3 Nb 2/3 O 3 –0.32PbTiO 3 films, it was found that the multiple polarization orientations persist even at high fields and that the rotation pathway through the M a (monoclinic distortion of R) and M c (monoclinic distortion of T) phases was strongly frequency‐dependent. [ 264 ] X‐ray diffraction, even with a micrometer‐scale spot, can probe the nanoscale structure through diffuse scattering, yet these measurements provide an averaged picture of a complex structure. The recognition that the local coupling of chemical, structural, and polar disorder is critical for understanding relaxors and has driven interest in mapping such disorder with TEM‐based approaches to develop real‐space understanding.…”

Section: New Materials and Epitaxymentioning

confidence: 99%

Thin‐Film Ferroelectrics

et al. 2022

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non-centrosymmetric structures which can possess a spontaneous electric polarization which can be controlled using applied electric fields (Figure 1). Ferroelectrics themselves are inherently hierarchical materials-wherein picometer ionic displacements give rise to polarization which can collectively extend over millimeters or self-organize into complex mesoscopic structures or collectively reorient under applied stimuli (e.g., electric fields, temperature, or stress). Understanding these complex behaviors necessitates a multilevel approach, wherein atomistic, microscopic, mesoscopic, and macroscopic properties are studied in concert. Parallel advances in synthesis, characterization, and simulation have enabled such multimodal studies and provided a methodology through which a multitude of ferroelectric functionalities can now be achieved and studied.The promise of utilizing these functionalities in a number of applications kick-started the modern era of ferroelectric research in the mid-20th century. [1] Looking further back, in the 1920s, the ability to switch the polarization of sodium potassium tartrate tetrahydrate (commonly known as Rochelle salt) was first observed, along with dielectric and piezoelectric anomalies near the ferroelectric transition-now called the Curie point. In the 1940s, as part of the accelerated research push associated with World War II, ferroelectric BaTiO 3 was discovered by accident. When modifying TiO 2 with BaO to enhance its dielectric properties, a record-high dielectric permittivity was discovered and subsequent studies demonstrated a hysteretic switchable polarization. This discovery ushered in a new understanding of ferroelectricity as more than a rare phenomenon associated with salts that contained hydrogen bonding, but rather as a phenomenon that could exist in simple oxides like perovskites. Over the subsequent decades, the number of ferroelectric compositions exploded, particularly within the perovskite oxides, introducing new chemistries including LiNbO 3 and the PbZr x Ti 1−x O 3 system. Meanwhile, theoretical descriptions of ferroelectricity were advanced through lattice-dynamical models invoking a soft-mode optical phonon. Studies of the piezoelectric, thermodynamic, and optical properties in ferroelectric ceramics allowed for their deployment in a number of applications including piezoelectric sensors and pyroelectric infrared detectors. By the 1960s, increased interest in using ferroelectric polarization for nonvolatile memory was driving research into Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length sc...

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Frequency-dependent suppression of field-induced polarization rotation in relaxor ferroelectric thin films

Cited by 7 publications

References 31 publications

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg_1/3Nb_2/3)O₃ − xPbTiO₃ Epitaxial Thin Films

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg_1/3Nb_2/3)O₃ − xPbTiO₃ Epitaxial Thin Films

Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond

Thin‐Film Ferroelectrics

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Frequency-dependent suppression of field-induced polarization rotation in relaxor ferroelectric thin films

Cited by 7 publications

References 31 publications

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 Epitaxial Thin Films

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 Epitaxial Thin Films

Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond

Thin‐Film Ferroelectrics

Contact Info

Product

Resources

About

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg_1/3Nb_2/3)O₃ − xPbTiO₃ Epitaxial Thin Films

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg_1/3Nb_2/3)O₃ − xPbTiO₃ Epitaxial Thin Films