From DRAM to SRAM with a novel sige-based negative differential resistance (NDR) device

Liang, Yongchun; Gopalakrishnan, Kailash; Griffin, P.B.; Plummer, J.D.

doi:10.1109/iedm.2005.1609520

Cited by 10 publications

(9 citation statements)

References 6 publications

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“…Recently, NDR device using both enhancement and depletion mode of MOSFETs, has been reported with high PVCR of 10 7 at 1.6 V [8]. These previous reports based on MOSFET operation and structure with terminal reconfigurations demonstrated PVCR at relatively high operation voltage over 1.5 or 2.0 V [4][5][6][7][8]. For higher PVCR over 10 4 at lower operation voltage below 1 V, simple pn diode combined with silicon (Si) nanowire (NW) structure has been presented with ultrahigh PVCR of 10 8 at low voltage of 1.0 V in our previous work [9].…”

Section: Introductionmentioning

confidence: 93%

“…For the improvement of PVCR over 100, many research works have been reported focusing on the metal-oxide-semiconductor field-effect transistor (MOSFET) structure instead of simple tunnel diode. Enhanced surface generation in SiGe-based gated diode is exploited for PVCR of 300 around at 3 V [4,5]. Other works show the PVCR of 1000 with breakdown mechanism of gated bipolar device in MOSFET structure [6,7].…”

Section: Introductionmentioning

confidence: 98%

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Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Shin¹,

Kang²,

Kim³

2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We propose a novel negative differential resistance (NDR) device with ultra-high peak-tovalley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 10 4 at low operation voltage of 0.5 V in a single peak and valley current.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 98%

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Shin¹,

Kang²,

Kim³

2013

JSTS:Journal of Semiconductor Technology and Science

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“…Lately, the rise of neuromorphic computing architectures (41) has also turned a large amount of attention to NDR devices, due to their ability to mimic biological neurons (42)(43)(44). SRAM (static RAM), based on the NDR effect, has been shown using various types of heterojunctions and 2D materials (45)(46)(47)(48). In this work, we report the design and the experimental demonstration of a new type of negative resistance electro-optic memory device that we refer to as the NDR optical SRAM (NDR-OSRAM).…”

Section: Introductionmentioning

confidence: 99%

CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

et al. 2023

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The impending collapse of Moore-like growth of computational power has spurred the development of alternative computing architectures, such as optical or electro-optical computing. However, many of the current demonstrations in literature are not compatible with the dominant complementary metal-oxide semiconductor (CMOS) technology used in large-scale manufacturing today. Here, inspired by the famous Esaki diode demonstrating negative differential resistance (NDR), we show a fully CMOS-compatible electro-optical memory device, based on a new type of NDR diode. This new diode is based on a horizontal PN junction in silicon with a unique layout providing the NDR feature, and we show how it can easily be implemented into a photonic micro-ring resonator to enable a bistable device with a fully optical readout in the telecom regime. Our result is an important stepping stone on the way to new nonlinear electro-optic and neuromorphic computing structures based on this new NDR diode.

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“…To overcome the two problems, a great of effort has been made to improve the functions of NDR devices. For example, the enhanced surface generation method was exploited in SiGe-based gated diode and the PVCR was improved to 300 at 3 V [8], [9]. The breakdown mechanism of gated bipolar device in MOSFET structure was employed to cause PVCR increased to 1000 at 2.5 V [10], [11].…”

Section: Introductionmentioning

confidence: 99%

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

et al. 2019

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To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 μm CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 × 10 10 ) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine S-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits.

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From DRAM to SRAM with a novel sige-based negative differential resistance (NDR) device

Cited by 10 publications

References 6 publications

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

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