Frugal discrete memristive device based on potassium permanganate solution

Abstract

Many thin film-based devices with solid electrolytes have been studied for memristive applications. Herein, we report a simple and facile way to fabricate solution-based, low-cost, and discrete two-terminal memristive devices using the KMnO4 solution. The water and methanol were used as a solvent to prepare different concentrations of KMnO4 to carry out the optimization study. Furthermore, the effect of KMnO4 concentration with aqueous and methanol solvents was studied with the help of current-voltage, device charge, charge-flux, and cyclic endurance properties. Interestingly, all developed devices show the asymmetric time-domain charge and double valued charge-flux properties, suggesting that aqueous KMnO4 and methanol-KMnO4 based devices are non-ideal memristors or memristive devices. The statistical measures such as cumulative probability and coefficient of variation are reported for the memristive devices. The possible switching mechanism of the discrete memristive was tried to explain with the UV-visible spectrum and theoretical framework. The optimized device was further studied using the cyclic voltammogram, Bode plot, and Nyquist plot. An equivalent circuit was derived for the optimized discrete memristive device using electrochemical impendence spectroscopy results. The results of the present investigation are beneficial to develop programmable analog circuits, volatile memory, and synaptic devices using discrete memristive devices.

Versatile Three-in-One Single Beam Visible Colorimeter for Undergraduate Chemistry Laboratories

“…The results indicate that the absorbance increased with concentration as expected from Beer’s law. The observed trend in absorbance values is in good agreement with the reported absorbance spectra of the KMnO 4 sample. − In addition to this, the absorbance spectra of K 2 Cr 2 O 7 are recorded at different wavelengths and concentrations. The K 2 Cr 2 O 7 samples show a maximum absorbance at 460 nm for all concentrations.…”

Liquid-Based Memory Devices for Next-Generation Computing

“…31,37,38,48 The device structure and performance (e.g., on/ off ratio, operating voltage, switching endurance, memory retention, and synaptic applications) of previously reported liquid-based memory devices are compared (Table 1). 31,48,53,59,66−68 2.2. Liquid-Based RSM Devices Using Metal Filaments.…”

“…Based on these features, liquid-based RSM devices can achieve low power consumption and high-efficiency characteristics by minimizing the migration energy of ions. 31,48,52,53 Based on these features, liquid-based memory devices have the potential to be emerging devices for sensing and synaptic applications. 54−56 Liquid-based devices provide the advantage of emulating synaptic characteristics because synaptic functions are realized by the movement of ions and neurotransmitters between the cerebrospinal fluid and neurons in the biological synapse.…”

“…The formation of the Ag or Cu filaments is the main mechanism of the liquid-based RSM devices. , The diffusion coefficients of ions are generally higher in liquid-phase materials than in solid-phase materials. Based on these features, liquid-based RSM devices can achieve low power consumption and high-efficiency characteristics by minimizing the migration energy of ions. ,,, …”

Forming‐Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

“…The two-terminal structure and unique electrical characteristics of memristors have been widely studied [3,8,9]. The resistance of a memristor can be modulated by applying voltage or electron flux through it, where it will remain after electrical stimulation is stopped [8,[10][11][12]. Furthermore, the resistance of a memristor can be incrementally modulated by voltage pulses, offering significant potential for multilevel data storage [13][14][15].…”