Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Holland, S.; Groom, D.; Palaio, N.P.; Stover, R. J.; Wei, Mingzhi

doi:10.1109/ted.2002.806476

Cited by 260 publications

(253 citation statements)

References 55 publications

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“…In previous work [1] [10] it has been shown that for these CCDs the spatial variance resulting from diffusion (σ 2 d ) depends on the substrate voltage (V sub ) used to obtain the depletion. For example if V sub is reduced, allowing extra diffusion in the CCD, the image introduced by the reduction of V sub from V B to V A can be quantified by looking at the difference between the two Fourier spectra.…”

Section: Experimental Setup and Measurementmentioning

confidence: 99%

“…where α is depends on temperature, drift distance and charge of the carries [1]. This translates into the relation…”

Section: Experimental Setup and Measurementmentioning

confidence: 99%

“…Recent advances [1] in CCD technology allow the fabrication of ≈ 300 µm thick devices which are fully depleted at relatively low voltages. These CCDs have a significantly higher efficiency in the near-IR and are the optical detectors chosen by several groups building new mosaic cameras for astronomy, such as DECam [2,3] , SNAP [4] and HyperSuprime [5].…”

Section: Introductionmentioning

confidence: 99%

“…The schematic of the devices developed [1] by Lawrence Berkeley National Laboratory (LBNL) that are going to be used in the DECam focal plane is presented in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

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Measurements of charge diffusion in deep-depletion CCDs by optical diffraction

et al. 2007

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The charge diffusion is measured in back illuminated, fully depleted, 250µm thick CCDs by imaging the diffraction pattern of a double slit. The CCDs studied are the focal plane detectors for the Dark Energy Camera (DECam) instrument currently under construction for the Dark Energy Survey (DES). The results presented here indicate that the dispersion of charge due to diffusion can be kept below the DES specification ( σ d < 7.0 µm ).

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Section: Experimental Setup and Measurementmentioning

confidence: 99%

“…where α is depends on temperature, drift distance and charge of the carries [1]. This translates into the relation…”

Section: Experimental Setup and Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The schematic of the devices developed [1] by Lawrence Berkeley National Laboratory (LBNL) that are going to be used in the DECam focal plane is presented in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Measurements of charge diffusion in deep-depletion CCDs by optical diffraction

et al. 2007

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“…These devices have high detection efficiency, low noise, good spatial resolution, and low dark current. Furthermore, thick CCDs with increased detection mass enable their use as particle detectors [17]. Using this technology, the DAMIC search for cold dark matter has been deployed at Snolab [10].…”

Section: Introductionmentioning

confidence: 99%

Charge coupled devices for detection of coherent neutrino-nucleus scattering

et al. 2015

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This article details the potential for using Charge Coupled Devices (CCD) to detect low-energy neutrinos through their coherent scattering with nuclei. The detection of neutrinos through this standard model process has not been accessible because of the small energy deposited in such interactions with the detector nuclei. Typical particle detectors have thresholds of a few keV, and most of the energy deposition expected from coherent scattering is well below this level. The devices we discuss can be operated at a threshold of approximately 30 eV, making them ideal for observing this signal. For example, the number of coherent scattering events expected on a 52 gram CCD array located next to a power nuclear reactor is estimated to be near to 626 events/year. The results of our study show that detection at a confidence level of 99% can be reached within three months for this kind of detector array.

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Imaging Detectors

Blouke¹

2005

Digital Encyclopedia of Applied Physics

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Charge‐coupled devices (CCDs) were first introduced in 1970 with the demonstration of an eight‐bit linear shift register. The concept of charge coupling was novel in the integrated circuit arena in that information was represented by discrete charge packets, which were manipulated in the device and, only at the output, converted to a voltage that could be measured. By operating in the charge domain, the charge‐coupled device is a true integrated circuit; it is impossible to make such a device from a collection of discrete components. The serious development of Active Pixel Sensors began in the early 1990s, though their heritage hails from work done in the 1960s. Active pixel sensors get their name from the nature of the structure that makes up the pixel: a charge collection site and readout circuitry are provided within each pixel. This article provides an overview of charge‐coupled devices and active pixel sensors, their design, structure, operation, and performance.

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Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Cited by 260 publications

References 55 publications

Measurements of charge diffusion in deep-depletion CCDs by optical diffraction

Measurements of charge diffusion in deep-depletion CCDs by optical diffraction

Charge coupled devices for detection of coherent neutrino-nucleus scattering

Imaging Detectors

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