Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements

Teyssier, Jean-Pierre; Viaud, J.P.; Raoux, J.J.; Quéré, Raymond

doi:10.1109/mwsym.1995.406148

Cited by 30 publications

(8 citation statements)

References 7 publications

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“…The pulse measurements are applied to the normal operating regions of the device rather than outside the safe-operating area of breakdown regions, which is the traditional domain of previous pulse investigations. Provided the pulses are short enough, the data agree with small-signal RF measurements [2], though some devices have dependencies that require nanosecond resolution [3], [4]. A full characterization of operating-condition dependency over all bias points is inevitably limited by the shortest available pulse.…”

Section: Introductionmentioning

confidence: 74%

Bias and frequency dependence of FET characteristics

Parker

Rathmell

2003

IEEE Trans. Microwave Theory Techn.

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A novel measurement of the dynamics of high electron-mobility transistor (HEMT) and MESFET behavior permits classification of rate-dependence mechanisms and identification of operating regions that they affect. This reveals a simple structure to the otherwise complicated behavior that has concerned circuit designers. Heating, impact ionization, and trapping contribute to transient behavior through rate-dependence mechanisms. These are illustrated by a simple description. Each has an effect on specific regions of bias and operating frequency. With this insight, it is possible to determine true isodyamic characteristics of HEMTs and MESFETs and to predict operating conditions that will or will not be affected by rate dependence. It is interesting to note that, for some devices, rate dependence can be seen to exist at microwave frequencies and may, therefore, contribute to intermodulation distortion.

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Section: Introductionmentioning

confidence: 74%

Bias and frequency dependence of FET characteristics

Parker

Rathmell

2003

IEEE Trans. Microwave Theory Techn.

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“…They allow designers to close the circle of development, measurement, evaluation and redesign [36]- [38].…”

Section: Nonlinear Continuous Wave Measurementsmentioning

confidence: 99%

NVNA versus LSNA: enemies or friends?

Moer¹,

Gomme

2010

IEEE Microwave

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N onlinearities are becoming very hot! After some years of hesitation, the high-frequency measurement world fi nally has acknowledged the need to measure the nonlinear behavior of a device or system correctly. Pushed by the modeling world, which clearly needs good nonlinear measurements to obtain good nonlinear models, some "nonlinear" measurement instruments were developed. Two different approaches to design a measurement instrument that is able to measure the nonlinear time domain waveforms correctly can be followed: a samplerbased methodology or a mixer-based methodology.Wendy Van Moer (wendy.vanmoer@vub.ac.be) and Liesbeth Gommé are with Vrije Universiteit Brussel, , over the years, both of the terms LSNA and NVNA have been used interchangeably to describe these and other similar instruments capable of measuring the vector nonlinear behavior of devices, circuits, and systems. A group of interested users formed the NVNA Users' Forum in 2002 to discuss measurement issues related to this broad class of instrumentation. The group currently meets each year at IMS, EuMW, and the fall ARFTG Microwave Measurement conference. For more information, visit http://www.arftg.org/about_ lsna.html.

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“…An available model, obtained from pulsed measurements up to 20 GHz and extrapolated to millimeter waves (P -model), is not sufficiently accurate [5]. Accordingly, a new model was developed (C-model).…”

Section: Active Device Modelingmentioning

confidence: 99%

Millimeter-wave monolithic power amplifier for mobile broad-band systems

Vaz

Freire²

2001

IEEE Trans. Microwave Theory Techn.

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For personal communication systems, the highest possible integration into monolithic technology of all RF functions are desirable. A frequency band around 60 GHz is assigned for future mobile communication fourth-generation systems (i.e., mobile broad-band systems concept). In this paper, the design and test of two monolithic class-A power amplifiers with 0.15-m pseudomorphic heterojunction FET (PMHFET) technology is presented. One of the amplifiers is a three-stage cascade 50-amplifier and the second is a balanced amplifier based on the previous one, but matched for integration on a waveguide carrier. A study on the accuracy of the passive elements and discontinuities models at 60 GHz was performed. Models for the microstrip discontinuities were obtained from electromagnetic simulation. In order to choose the best FET bias, a nonlinear model for the PMHFETs devices, based on continuos dc and ac measurements, were derived. For comparison purposes, the FET simulation results with a nonlinear model based on pulsed measurements are also presented. To avoid stability problems, at the device level an RC feedback network was introduced. A 1-dB compression point of 18 dBm was measured on-wafer for both amplifiers at 62 GHz with = 3 5 V. The three-stage and balanced amplifiers chip sizes are 3 mm 1.5 mm and 3 mm 4 mm, respectively.Index Terms-Feedback, large-signal model, MMWIC, PMHFET, power amplifier, -band.

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Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements

Cited by 30 publications

References 7 publications

Bias and frequency dependence of FET characteristics

Bias and frequency dependence of FET characteristics

NVNA versus LSNA: enemies or friends?

Millimeter-wave monolithic power amplifier for mobile broad-band systems

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