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In this letter a new look-up table model is developed for the nonlinear modeling of radio frequency (RF) LDMOS transistors. The modeling technique is based on the use of approximation splines that are coupled to a pulsed I I I-V V V characterization setup. It provides a very fast modeling procedure, while avoiding the appearance of undesired ripples in the modeled functions. The technique has been applied to a RF LDMOS technology for L L L-band applications, obtaining excellent results in the prediction of both the small-and large-signal transistor responses. This technique is specially suitable for fast-evolution technologies.

A large-signal model for RF power MOSFET has been obtained using a new characterization and extraction technique. This technique is based on pulsed I-V characteristics and pulsed S-parameters measurements, to take into account the thermal state of the device. A table-based model is used to represent the I-V drain current source. The complete large-signal model is implanted in an harmonicbalance commercial simulator and its accuracy is evidenced by a comparison with active load-pull measurements at L band I -INTRODUCTIONPower MOSFET technologies are of increasing usefulness for RF applications due to their robustness, simplicity and low cost, that make them suitable for personal communication systems. Performances of these technologies have been widely demonstrated, showing that they are at par with that of Silicon Bipolar transistors and GaAs MESFETs at L band frequencies (0.39-1.55 GHz), even for applications other than power amplification [I], [21.