Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Nakajima, Akira; Kudo, Takashi; Ito, Takashi

doi:10.1063/1.3549178

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…Gate delay is increased [5] and alternatively threshold voltage of the device has to be scaled [6]. Nevertheless, scaling of the threshold voltage is accompanied with an increase in OFFstate leakage current [7], [8]. To bring the leakage current in control, selection of semiconductor materials used in the MOS structure is essential.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Voltage Operation of ${\rm Al}/{\rm La}_{x}{\rm Ce}_{1-x}{\rm O}_{z}/{\rm 4H\hbox{-}SiC}$ for Oxygen Sensing

Lim¹,

Cheong²

2013

IEEE Electron Device Lett.

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A metal-reactive oxide-silicon carbide (SiC) sensor, responding to oxygen gas, was fabricated using a La x Ce 1−x O z layer deposited between 4H-SiC substrate and Al gate as a function of postdeposition annealing (PDA) of the oxide layer from 400 to 1000°C. Sensitivity of the sensor increased with increasing of the PDA temperature. Current-time and currentgate voltage response was investigated in ultralow voltage regime under a forward bias of 0.3 V to study sensitivity of the sensor. Sensing mechanism of the sensor toward the oxygen gas was proposed and discussed.Index Terms-Lanthanum cerium oxide, metal reactive oxide, oxygen, silicon carbide (SiC), ultralow voltage.

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Section: Introductionmentioning

confidence: 99%

Ultralow Voltage Operation of ${\rm Al}/{\rm La}_{x}{\rm Ce}_{1-x}{\rm O}_{z}/{\rm 4H\hbox{-}SiC}$ for Oxygen Sensing

Lim¹,

Cheong²

2013

IEEE Electron Device Lett.

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“…9 A prototype device was fabricated with CMOS technology and preliminary results of the device characteristics were obtained. 9 A prototype device was fabricated with CMOS technology and preliminary results of the device characteristics were obtained.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of metal–oxide–semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation

Kudo

Ito

Nakajima

2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inFunctional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation Appl. Phys. Lett. 98, 053501 (2011); 10.1063/1.3549178 Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxidesemiconductor field-effect transistor Appl. Phys. Lett. 92, 063506 (2008); 10.1063/1.2839402Scaling considerations for high performance 25 nm metal-oxide-semiconductor field effect transistors Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal-oxide-semiconductor field effect transistors J.Low-voltage operation from the tower structure metal-oxide-semiconductor field-effect transistor Si field emitter A functional gate metal-oxide-semiconductor field-effect transistor that enables self-adjustment of threshold voltage (V th ) was developed for the ultralow power operation. The operating principle enables the on-current to be increased without increasing the off-current. Prototype devices were fabricated with complementary metal-oxide-semiconductor (CMOS) fabrication technology using a silicon-on-insulator substrate, and the fundamental device characteristics necessary for ultralow power operation were demonstrated with an emphasis on the device reliability. A negative V th shift was caused by electron ejection from the poly-Si charge trap layer, and a positive V th shift was caused by electron injection from the top gate electrode. A fabricated device endured 10 5 electron ejection-and-injection cycles when only a positive bias V g was applied. Endurance characteristics of the fabricated devices showed that the number of cycles to oxide breakdown increased as the channel size decreased. The authors explained the SiO 2 breakdown mechanism by using a percolation model. They consider that scaling down of the channel size and the thickness of the tunnel gate oxide will open the way to the development of CMOS logic applications for this device.

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Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer

Liao

Wang

et al. 2011

Applied Physics Letters

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A high-aspect-ratio 3D multi-gate n-channel fin-shaped field effect transistor (FinFET) has been integrated with a stressor of a highly tensile nitride film as the initial inter layer dielectric capping layer upon a (110)-orientated silicon-on-insulator wafer. Drastically enhanced electrical performances, such as 190% enhancement of peak channel mobility, 91% of peak transconductance, and 34% of saturation current, etc., are achieved for an NMOS FinFET with a gate length of 90 nm. The Ioff-Ion universal curve also demonstrates an extraordinary drive current gain of 26%. Moreover, the hot carrier injection lifetime can be increased from 7.78 × 102 to 5.26 × 103 year (yr) due to the incorporation of this high-tensile contact etching stop layer and relaxation of the Si crystalline channel layer.

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Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Cited by 3 publications

References 15 publications

Ultralow Voltage Operation of ${\rm Al}/{\rm La}_{x}{\rm Ce}_{1-x}{\rm O}_{z}/{\rm 4H\hbox{-}SiC}$ for Oxygen Sensing

Ultralow Voltage Operation of ${\rm Al}/{\rm La}_{x}{\rm Ce}_{1-x}{\rm O}_{z}/{\rm 4H\hbox{-}SiC}$ for Oxygen Sensing

Characteristics of metal–oxide–semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation

Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer

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