Fundamentals of Modern VLSI Devices

Taur, Yuan; Ning, T.H.

doi:10.1017/cbo9781139195065

Cited by 1,590 publications

(1,268 citation statements)

References 368 publications

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“…The aggressive scaling-down of MOSFETs in the deep submicrometer domain requires ultrathin oxides and density-of-states) [15][16], such that the lowest of the allowed energy levels for electrons (resp. for holes) in the well does not coincide with the bottom of the conduction band (resp.…”

Section: Quantum Confinement Effectsmentioning

confidence: 99%

A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Munteanu

Moreau

Autran

2009

Molecular Simulation

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Section: Quantum Confinement Effectsmentioning

confidence: 99%

A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Munteanu

Moreau

Autran

2009

Molecular Simulation

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“…The current generated from the reverse biased junction becomes negligible compared with the current that flows through the channel and changes the current-voltage characteristic (Eq. (6) [25][26][27]). …”

Section: Methods Of Quality Factor Tuningmentioning

confidence: 99%

“…(6) to Eq. (7) [25][26][27] (again, V GS , V T , and V DS are the primary parameters to focus on to understand the transistor behavior).…”

Section: Methods Of Quality Factor Tuningmentioning

confidence: 99%

Bandwidth Tuning in Transistor Embedded Metamaterials Using Variable Resistance

Barrett¹,

Katko²,

Cummer³

2016

PIER

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Abstract-Metamaterials have been previously loaded with diodes and other types of passive circuit elements. Transistors offer an alternative to these established loading elements to expand the possible capabilities of metamaterials. With embedded transistors, additional degrees of freedom are achieved and lay out the architecture for more complex electromagnetic metamaterial design. A mathematical analysis of transistor loaded SRR unit cells is described in which the transistor acts as a variable resistor. From the mathematical analysis, we calculate transmission coefficients for a single unit cell. We then experimentally measure two SRRs with tunable quality factors and thus tunable bandwidth based upon modulating the effective loading circuit resistance to confirm the calculations. From the agreement between the calculated and measured transmission coefficients, we expand the analysis to show that a slab of more densely packed unit cells can achieve negative permeability with varying degrees of dispersion.

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“…S does not notably degrade as the doping concentration increases but is tied to a plausibly small value near 60 mV=dec, the theoretical limit in the presence of thermionic emission at 300 K, at doping concentrations of 10 19 cm −3 and below. S (mV=dec) is defined as 29) S ¼ ln 10 Á mkT q…”

Section: Device Structure and Simulation Approachmentioning

confidence: 99%

Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

Cho

2016

Jpn. J. Appl. Phys.

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In this work, a nanowire p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) coaxially having a Si core and a Ge peripheral channel is designed and characterized by device simulations. Owing to the high hole mobility of Ge, the device can be utilized for high-speed CMOS integrated circuits, with the effective confinement of mobile holes in Ge by the large valence band offset between Si and Ge. Source/drain doping concentrations and the ratio between the Si core and Ge channel thicknesses are determined. On the basis of the design results, the channel length is aggressively scaled down by evaluating the primary DC parameters in order to confirm device scalability and low-power applicability in sub-10-nm technology nodes.

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Fundamentals of Modern VLSI Devices

Cited by 1,590 publications

References 368 publications

A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

Bandwidth Tuning in Transistor Embedded Metamaterials Using Variable Resistance

Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

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