GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications

Kim, M.E.; Oki, A.K.; Gorman, G.M.; Umemoto, D.K.; Camou, J.B.

doi:10.1109/22.32211

Cited by 134 publications

(15 citation statements)

References 32 publications

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“…GaAs-based devices are commonly used in high-end commercial applications, such as satellite communication systems and radar. 3 The so-called low-temperaturegrown GaAs (LT-GaAs) material plays a special role, since it exhibits a <200-fs carrier lifetime and, as a result, has been widely implemented in the fastest photodetectors 4,5 and THz photomixers. 6 Independently, during the last decade, there has been an explosive growth of a new generation of devices based on low-dimensional, nanometer-sized structures.…”

mentioning

confidence: 99%

Subpicosecond electron-hole recombination time and terahertz-bandwidth photoresponse in freestanding GaAs epitaxial mesoscopic structures

Mikulics

Zhang

Serafini

et al. 2012

Applied Physics Letters

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We present the ultrafast (THz-bandwidth) photoresponse from GaAs single-crystal mesoscopic structures, such as freestanding whiskers and platelets fabricated by the top-down technique, transferred onto a substrate of choice, and incorporated into a coplanar strip line. We recorded electrical transients as short as ∼600 fs from an individual whisker photodetector. Analysis of the frequency spectrum of the photoresponse electrical signal showed that, intrinsically, our device was characterized by an ∼150-fs carrier lifetime and an overall 320-fs response. The corresponding 3-dB frequency bandwidth was 1.3 THz—the highest bandwidth ever reported for a GaAs-based photodetector. Simultaneously, as high-quality, epitaxially grown crystals, our GaAs structures exhibited mobility values as high as ∼7300 cm2/V·s, extremely low dark currents, and ∼7% intrinsic detection efficiency, which, together with their experimentally measured photoresponse repetition time of ∼1 ps, makes them uniquely suitable for terahertz-frequency optoelectronic applications, ranging from ultrafast photon detectors and counters to THz-bandwidth optical-to-electrical transducers and photomixers.

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mentioning

confidence: 99%

Subpicosecond electron-hole recombination time and terahertz-bandwidth photoresponse in freestanding GaAs epitaxial mesoscopic structures

Mikulics

Zhang

Serafini

et al. 2012

Applied Physics Letters

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“…3 First, two doped epitaxial layers are deposited by molecular beam epitaxy onto a semiinsulating GaAs substrate 4 (Fig. 1).…”

Section: Methodsmentioning

confidence: 99%

Electro-thermal resistance of GaAs interconnects

Wartenberg¹,

Zhao

Liu

2005

Journal of Elec Materi

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This paper describes the effect of steady-state heating on the electrical and thermal resistance of interconnects on GaAs. Examined is a typical dual-layer metal interconnect system, common to GaAs processing. The interconnect system is considered in three parts, the interconnect metals, the Si 3 N 4 dielectric surrounding the metal, and the Al x Ga 1-x As epitaxial substrate. Using a meandering line as a test structure, measurements show how the direct current (DC) resistance increases with both temperature and dissipated power. Thermal resistors are proposed to account for self-heating and thermal coupling.

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“…Moreover, InGaP/GaAs HBT base is highly doped for high linearity and high operating frequency. In result, the base resistance of InGaP/GaAs HBT is very small, and InGaP/GaAs HBT shows low noise figure [1]. For this reason, the InGaP/GaAs HBT can be suitable device for not power amplifier but LNA.…”

Section: Introductionmentioning

confidence: 92%