Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Myoung, Seong-Sik; Yook, Jong Gwan

doi:10.1002/mop.21047

Cited by 13 publications

(10 citation statements)

References 7 publications

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“…In no other LNA does the 3 dB bandwidth exceed 3% of the constituent transistor's f T : the RF LNAs in [6,11,16,34,35] have ratios of 0.01, 0.013, 0.027, 0.007 and 0.005, respectively.…”

Section: Comparisons With Existent Lnasmentioning

confidence: 99%

“…The five fundamental parameters of the LNA are: gain and bandwidth, noise figure, linearity, impedance matching and power consumption [3,[6][7][8]. The goals in LNA design include minimising its noise figure, providing moderate to high gain with sufficient linearity, and establishing compatibility to other transceiver blocks (impedance matching).…”

Section: Lna Parametersmentioning

confidence: 99%

“…In the basic cascode, input impedance matching is achieved using the degeneration inductor [6,25,26,32,33]. The output matching circuit is an LCR-type.…”

Section: Basic Cascodementioning

confidence: 99%

“…2 Cascode-based LNAs. a Basic cascode [6], b folded cascode [21], c current-reuse cascode [35], d wideband matching [12], e resistive feedback [14], f distributed amplifier [36] Analog Integr Circ Sig Process (2009) 60: 169-193 173 network: combining the cascode configuration with a three-section bandpass-filter based matching ( Fig. 2(d); [12]).…”

Section: Multi-section-input Cascodementioning

confidence: 99%

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Low-noise amplifiers in wireless communications: state of the art, two new wideband all-active LNAs in SiGe-BiCMOS

Godara

Fabre

2009

Analog Integr Circ Sig Process

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The aim of this paper is three-fold. First, it introduces the low-noise amplifier, its relevance in modern wireless communications receivers and the performance expected of it. Then, it presents an exhaustive review of the existing topologies, presenting their advantages and shortcomings. And finally, it introduces a new class of LNAs, based on current conveyors, describing the founding principle and the performances of two new LNAs, one single-ended and the other differential. Both these new LNAs offer the following notable advantages over existent topologies: total absence of passive elements (and the smallest LNAs in their respective classes); wideband performance, with stable frequency responses from 0 to 3 GHz; easy gain control over wide ranges (0-20 dB). Comparisons with other topologies prove that the new class of LNA implementations greatly advances the state of the art. These amplifiers are ideally suited to today's multiband receivers.

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“…In no other LNA does the 3 dB bandwidth exceed 3% of the constituent transistor's f T : the RF LNAs in [6,11,16,34,35] have ratios of 0.01, 0.013, 0.027, 0.007 and 0.005, respectively.…”

Section: Comparisons With Existent Lnasmentioning

confidence: 99%

Section: Lna Parametersmentioning

confidence: 99%

“…In the basic cascode, input impedance matching is achieved using the degeneration inductor [6,25,26,32,33]. The output matching circuit is an LCR-type.…”

Section: Basic Cascodementioning

confidence: 99%

Section: Multi-section-input Cascodementioning

confidence: 99%

See 2 more Smart Citations

Low-noise amplifiers in wireless communications: state of the art, two new wideband all-active LNAs in SiGe-BiCMOS

Godara

Fabre

2009

Analog Integr Circ Sig Process

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“…In ref. [5] has been shown results of an LNA for WLAN applications at 5.3 GHz with 13 dB gain, noise figure of 2.1 dB and excellent linearity in terns of IIP3. Physical modeling of semiconductor devices allows deepening in the implications that the geometry and the characteristics of the materials have in the real operation of the device. In this work, it is compared the operation of two transistors which the same cutoff and maximum frequencies, 80 GHz and 40 GHz, when it keeps constant the total size of the device, the dimensions of the base mesa structure and the doping profile and it is modified the layout of the emitter and base regions.…”

Section: Introductionmentioning

confidence: 95%

Emitter Pedestal Design of GaInP/GaAs Heterojunction Bipolar Transistors

López-González

2007

2007 Spanish Conference on Electron Devices

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This paper shows some consequences of the design of the emitter pedestal in the electric DC and AC performance of GaInP/GaAs Heterojunction Bipolar Transistors. Two HBT transistors are compared which have the same wafer area and base and collector contact areas, and very similar cutoff frequency and maximum frequency, approximately 80 and 40 GHz. The results show that it is possible to optimize the heterojunction bipolar transistor design keeping the MMIC rules and the wafer area utilized.

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DC and small‐signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors

López-González

2009

Int J Numerical Modelling

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SUMMARYThis paper describes the DC and small-signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter-base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff and maximum frequencies but significant differences are observed in other characteristics such as base-emitter turn-on voltage, saturation collector-emitter voltage, forward current gain, maximum transducer gain and maximum stable gain.

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Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Cited by 13 publications

References 7 publications

Low-noise amplifiers in wireless communications: state of the art, two new wideband all-active LNAs in SiGe-BiCMOS

Low-noise amplifiers in wireless communications: state of the art, two new wideband all-active LNAs in SiGe-BiCMOS

Emitter Pedestal Design of GaInP/GaAs Heterojunction Bipolar Transistors

DC and small‐signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors

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