“…SiGe technologies, known for their high transconductance at low current, are particularly attractive for high frequency low noise amplifiers as well as power amplifiers since SiGe is believed to have several advantages over GaAs in terms mainly of reduced chip area, chip robustness and reliability at high current densities [1][2][3]. SiGe heterojunction bipolar transistors are considered, in this context, as non-expensive alternative to AlGaAs/GaAs-based power amplifiers, which are key components in the wireless communication applications [4]. On the photodetection application front, the addition of Ge to Si is known to enhance the absorption coefficient over a wide spectral range, which allows a reduction of the detector thickness, and, therefore, enables faster detectors than with pure Si [5].…”