GaAs/InGaP Core–Multishell Nanowire-Array-Based Solar Cells

Nakai, Eiji; Yoshimura, Masashi; Tomioka, Katsuhiro; Fukui, Takashi

doi:10.7567/jjap.52.055002

Cited by 45 publications

(47 citation statements)

References 24 publications

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“…[221][222][223][224][225][226][227][228] An analogous synthetic approach for generating epitaxial core-multishell nanopillars based on GaAs (doped with nitrogen and phosphorous) and InGaP has been described. for solar cell, photoluminescence and other photovoltaic applications.…”

Section: Synthesis Of Core-shell Nanocatalystsmentioning

confidence: 99%

Core–shell nanoparticles: synthesis and applications in catalysis and electrocatalysis

et al. 2015

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Core-shell nanoparticles (CSNs) are a class of nanostructured materials that have recently received increased attention owing to their interesting properties and broad range of applications in catalysis, biology, materials chemistry and sensors. By rationally tuning the cores as well as the shells of such materials, a range of core-shell nanoparticles can be produced with tailorable properties that can play important roles in various catalytic processes and offer sustainable solutions to current energy problems. Various synthetic methods for preparing different classes of CSNs, including the Stöber method, solvothermal method, one-pot synthetic method involving surfactants, etc., are briefly mentioned here. The roles of various classes of CSNs are exemplified for both catalytic and electrocatalytic applications, including oxidation, reduction, coupling reactions, etc.

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Section: Synthesis Of Core-shell Nanocatalystsmentioning

confidence: 99%

Core–shell nanoparticles: synthesis and applications in catalysis and electrocatalysis

et al. 2015

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“…Semiconductor nanowires (NWs) are promising building blocks for next-generation photovoltaics [1][2][3][4][5] . The nanoscale dimensions of NWs provides strain relaxation capability, enabling heteroepitaxy of III-V materials on Si as well as a higher degree of freedom in the design of multijunction solar cells with lattice-mismatched materials 6,7 .…”

Section: Main Textmentioning

confidence: 99%

A Comparative Study of Absorption in Vertically and Laterally Oriented InP Core–Shell Nanowire Photovoltaic Devices

et al. 2015

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We have compared the absorption in InP core-shell nanowire p-i-n junctions in lateral and vertical orientation. Arrays of vertical core-shell nanowires with 400 nm pitch and 280 nm diameter, as well as corresponding lateral single core-shell nanowires, were configured as photovoltaic devices. The photovoltaic characteristics of the samples, measured under 1 sun illumination, showed a higher absorption in lateral single nanowires compared to that in individual vertical nanowires, arranged in arrays with 400 nm pitch. Electromagnetic modeling of the structures confirmed the experimental observations and showed that the absorption in a vertical nanowire in an array depends strongly on the array pitch. The modeling demonstrated that, depending on the array pitch, absorption in a vertical nanowire can be lower or higher than that in a lateral nanowire with equal absorption predicted at a pitch of 510 nm for our nanowire geometry. The technology described in this Letter facilitates quantitative comparison of absorption in laterally and vertically oriented core-shell nanowire p-i-n junctions and can aid in the design, optimization, and performance evaluation of nanowire-based core-shell photovoltaic devices.

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“…These surface states degraded the optical properties of III-V NWs and device performance through a nonradiative recombination process. These growth techniques have further been used to demonstrate NW-LEDs using GaAs/AlGaAs CS [141], GaAs/InGaAs CMS NWs [142], NW-solar cells using GaAs CS [105,143], GaAs/GaAsP (or InGaP) CMS NW [144,145], InP/AlInP CS NW [146], NW-FETs using InAs/InAlAs CMS [147], InGaAs/InAlAs CS [136,148], and InGaAs/InP/ InAlAs/InGaAs CMS NWs [136]. The shell layers were also more stable in the atmosphere compared to sulfur passivation [138].…”

Section: Ingap Nanowiresmentioning

confidence: 99%