GaAs junction lasers containing the amphoteric dopants Ge and Si

GaAs-GaAsP Heterostructure Injection Lasers

“…4 are calculated curves for the efficiency as a function of confinement distance for minority carrier diffusion lengths of 1, 2, and 3~. These curves were calculated following the work of Burnham et al (7) using the low-level injection formulation for a p/n junction. It can be shown that, as the surface recombination velocity at the GaAs-GaAsP interface approaches infinity, the ratio of the radiative current density, JR, to the total injected current density, Jo, can be written as ( ' )…”

“…This composition change corresponds to change in band gap energy or barrier height of aE ~, 0.1 eV. Previous work indicated that a barrier of this height would confine the majority of injected electrons (7) as well as provide an effective waveguide for electromagnetic mode confinement (4). It was hoped that interracial dislocations could be reduced to a satisfactory extent by keeping ax as small as possible.…”