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A rapid thermal process for the diffusion of Zn into GaAs has been developed to fulfill the need for highly doped p type layers in GaAs technology. The process uses a solid Zn:Si:O source layer and a quartz-halogen lamp system for the thermal drive-in. Surface concentrations of the order of 1020/cm3 have been achieved with good depth reproducibility and low lateral diffusion. Specific contact resistance of Au:Zn/Au alloyed contacts fabricated using this process was in the 10−7 ohm-cm2 range.

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