GaN-Based Technology for 5G Applications

Sengar, Brajendra S.; Kumar, Amitesh; Reddeppa, Maddaka; Kumar, Saurav; Oo, Htet Ne

doi:10.1007/978-981-15-9865-4_9

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…Furthermore, the development of novel device concepts based on UWBG materials is driving innovation in semiconductor technology. These new devices, characterized by their UWBGs, offer unique capabilities and functionalities, opening up avenues for groundbreaking applications in areas such as power electronics [9,10], communications [10][11][12], and sensing [13]. The renaissance of UWBG semiconductor materials represents a significant paradigm shift in semiconductor research and technology.…”

Section: Introductionmentioning

confidence: 99%

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

Liao,

Kao,

et al. 2024

Nanomaterials

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This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical and electrical properties of In-doped SiC thin films. Hall effect measurement was used to measure the resistivity, mobility, and carrier concentration and confirm its n-type semiconductor nature. The uniform dispersion of In ions in SiC was as confirmed by electron microscopy energy-dispersive spectroscopy and secondary ion mass spectrometry analyses. The Tauc Plot method was employed to determine the Eg values of pure SiC and In-doped SiC thin films. Semiconductor parameter analyzer was used to measure the conductivity and the I-V characteristics of devices in In-doped SiC thin films. Furthermore, the third finding demonstrated that In2O3-doped SiC thin films exhibited remarkable current density. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a significant relationship between conductivity and oxygen vacancy concentration. Lastly, depositing these In-doped SiC thin films onto p-type silicon substrates etched with buffered oxide etchant resulted in the formation of heterojunction p-n junction. This junction exhibited the rectifying characteristics of a diode, with sample current values in the vicinity of 102 mA, breakdown voltage at approximately −5.23 V, and open-circuit voltage around 1.56 V. This underscores the potential of In-doped SiC thin films for various semiconductor devices.

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Section: Introductionmentioning

confidence: 99%

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

Liao,

Kao,

et al. 2024

Nanomaterials

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“…High-electron mobility transistors (HEMTs) based on gallium nitride (GaN) are attracting the attention of researchers day by day with the extensive advantages that they offer in a broad range of applications, such as high-power amplifiers, monolithic microwave integrated circuits (MMICs), high-performance radars, advanced satellite and space systems, emerging 5G and 6G communication, and digital and quantum computing electronics. [1][2][3][4][5][6][7][8] The main features that make GaN HEMTs so advantageous are [9][10][11][12] (i) high current capacity resulting from the higher electron mobility and the saturation velocity due to the two-dimensional electron gas (2DEG) confinement at the heterostructure, (ii) resistance to the high voltages owing to the wide bandgap of the semiconductor material, (iii) operation at high frequencies in the GHz and THz ranges, and (iv) processing high powers 13 thanks to the high current and the high voltage characteristics. GaN HEMT devices mostly operate at high power densities.…”

Section: Introductionmentioning

confidence: 99%

Correlation-based study of FEA and IR thermography to reveal the 2DEG temperature of a multi-fingered high-power GaN HEMT

Durna

Koçer

Aras

et al. 2022

Journal of Applied Physics

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High electron mobility transistors (HEMTs) based on gallium nitride (GaN) with a wide range of application potentials need to be rigorously examined for reliability to take advantage of their intrinsically extraordinary properties. The most vital parameter of the reliability, the hotspot, or Tmax, resides in the two-dimensional electron gas (2DEG) temperature profile inside the device where optical access is often restricted. The device surface temperature can be measured by widespread IR thermography with the limitation of diffraction-based IR transmission losses. However, Tmax on the sub-surface cannot be reached thermographically. Although finite element analysis (FEA)-based thermal simulations can easily reveal the 2DEG temperature profile, accuracy is tightly dependent on the realistic modeling of material/structure parameters. Because these parameters are rather sensitive to fabrication and processing, it is quite difficult to specify them accurately. To overcome these drawbacks, a method integrating both IR thermography and FEA thermal analysis is demonstrated on a fabricated high-power 40 × 360 μm packaged GaN HEMT as a proof-of-concept. Utilizing the simulation and measurement temperature profiles, a correlation algorithm is developed so that accuracy of the FEA thermal simulation is improved by calibrating the parameters specific to fabrication/process conditions by thermographic measurement. Then, it is quantitatively shown that the proposed method is able to find the 2DEG temperature profile and Tmax with an accuracy that best suits the intrinsic and extrinsic characteristics of the device under test. The method sheds light on GaN reliability engineering by providing a feasible and reliable alternative to realistically reveal hotspot information for device lifetime assessments.

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A Cost-Effective 5-W GaN HEMT Power Amplifier for Sub-6-GHz 5G Wireless Communications

Manh¹,

Hoang²,

Tran³

2022

Mobile Netw Appl

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GaN-Based Technology for 5G Applications

Cited by 4 publications

References 27 publications

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

Correlation-based study of FEA and IR thermography to reveal the 2DEG temperature of a multi-fingered high-power GaN HEMT

A Cost-Effective 5-W GaN HEMT Power Amplifier for Sub-6-GHz 5G Wireless Communications

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