2015
DOI: 10.1103/physrevb.91.115132
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Gap generation and phase diagram in strained graphene in a magnetic field

Abstract: The gap equation for Dirac quasiparticles in monolayer graphene in constant magnetic and pseudomagnetic fields, where the latter is due to strain, is studied in a low-energy effective model with contact interactions. Analyzing solutions of the gap equation, the phase diagram of the system in the plane of pseudomagnetic and parallel magnetic fields is obtained in the approximation of the lowest Landau level. The three quantum Hall states, ferromagnetic, antiferromagnetic, and canted antiferromagnetic, are reali… Show more

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Cited by 7 publications
(3 citation statements)
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References 57 publications
(106 reference statements)
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“…In the context of graphene it is responsible for the opening of a gap catalyzed by the strong magnetic field, which favours the electron-hole pairing formation. For pseudo-magnetic fields, it was shown [287,288,289] that strained graphene is similarly unstable towards an interaction induced gap, but in this case the ground state breaks time reversal symmetry and has a finite Hall conductivity [109]. An experimentally plausible scenario emerges when considering strain configurations that result in strong uniform pseudo-magnetic fields [57,290].…”
Section: Topological Phases Induced From the Interplay Between Strainmentioning
confidence: 99%
“…In the context of graphene it is responsible for the opening of a gap catalyzed by the strong magnetic field, which favours the electron-hole pairing formation. For pseudo-magnetic fields, it was shown [287,288,289] that strained graphene is similarly unstable towards an interaction induced gap, but in this case the ground state breaks time reversal symmetry and has a finite Hall conductivity [109]. An experimentally plausible scenario emerges when considering strain configurations that result in strong uniform pseudo-magnetic fields [57,290].…”
Section: Topological Phases Induced From the Interplay Between Strainmentioning
confidence: 99%
“…Looking at the structure of the GF (7), one can see that the projectors P ± = (1 ± τ 3 sgn(B + ))/2 take into account that, for example, for B + > 0, the states on A and B sublattices involve L n and L n−1 , respectively. The most general expression of the propagator in the presence of B, B pm and various types of the gaps is provided in [24].…”
Section: Green's Function Sublattice and Valley Resolved Dosmentioning
confidence: 99%
“…[39][40][41][42][43][44][45][46][47] Furthermore, it is known that, strain engineering in graphene can modify its distances between ions in graphene-lattice sites, electronic structure, create polarized carrier puddles, induce pseudomagnetic fields, 48,49 and alter surface properties, which have been well investigated and summarized in previous studies and reviews. [50][51][52][53] The incredible elastic deformability of graphene, [54][55][56] capable of tolerating nondestructive reversible deformations up to extraordinarily high failure limits ( 25%, 57,58 26:5%, 59 or even 27% 60 ), prompted a series of studies on strain effects on graphene's electronic characteristics, notably bandgap engineering. The employment of a mixture of shear strain and uniaxial tensile deformations has been discovered to be the most convenient method for bandgap opening and tuning.…”
Section: Introductionmentioning
confidence: 99%