Gate controllable resistive random access memory devices using reduced graphene oxide

Abstract

The biggest challenge in the resistive random access memory (ReRAM) technology is that the basic operational parameters, such as the set and reset voltages, the current on-off ratios (hence the power), and their operational speeds, strongly depend on the active and electrode materials and their processing methods. Therefore, for its actual technological implementations, the unification of the operational parameters of the ReRAM devices appears to be a difficult task. In this letter, we show that by fabricating a resistive memory device in a thin film transistor configuration and thus applying an external gate bias, we can control the switching voltage very accurately. Taking partially reduced graphene oxide, the gate controllable switching is demonstrated, and the possible mechanisms are discussed.

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

“…GO is the most studied graphene derivative used as a material for the development of resistive memory cells. [42][43][44][45][46][47][48][49][50] Structures based on GO exhibit a resistive switching effect; they possess flexibility; and they are transparent, easy in fabrication, and inexpensive. Nonetheless, it should be borne in mind that progress in the stability of the switchings had begun from just one switching, reached 100 switchings, and by now it has reached 10 4 switchings, these values, however, is insufficient for practical applications.…”

“…Typical of organic materials is the degradation of their properties with time; that is why with the passage to the inorganic materials for flexible and printed electronics a certain breakthrough in the quality of fabricated structures is expected to be achieved. GO is the most studied graphene derivative used as a material for the development of resistive memory cells . Structures based on GO exhibit a resistive switching effect; they possess flexibility; and they are transparent, easy in fabrication, and inexpensive.…”

Graphene and Related Materials for Resistive Random Access Memories

“…Further confirmation of the results in Ref. [247] is necessary. It is very striking that, despite all papers using spin coating resulted in thick >10 nm layers, [241,245,249,250] the endurance for all RRAMs in Table 3 is just ~100 cycles.…”

“…GO and reduced GO (RGO) have been widely investigated for RS applications. [132][133][241][242][243][244][245][246][247][248][249][250][251][252][253] GO films consisting of interconnected flakes are typically produced by LPE and spin coated on the surface of a substrates (which serves as top electrode), with subsequent deposition of top contacts on the GO surface [254] (see Figs. 9 and 10).…”

“…Si/GO/Al [250] , Ge/GO/Al [250] and p-Si/GO/AG [247] show (unwanted) high operation voltages of -5.5V, -8.7V and 3.5V (respectively). While Si/GO/Al [250] , Ge/GO/Al [250] show low ION/IOFF<120, p-Si/GO/AG [247] reached 10 4 . Further confirmation of the results in Ref.…”