2013
DOI: 10.1021/jp311875g
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Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor

Abstract: A vertical gate symmetrical molecular transistor is demonstrated. It includes self-assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I−V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tent… Show more

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Cited by 38 publications
(39 citation statements)
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“…We have reported before molecular diodes based on SAMs of S(CH 2 ) 11 Fc in junctions of the form of Ag‐S(CH 2 ) 11 Fc//GaO x /eutectic alloy of gallium and indium (EGaIn) where “‐,” “//,” and “/” denote a covalent interaction, noncovalent interaction, and the interface between GaO x and EGaIn (Figure ), respectively. These diodes have large rectification ratios of 1.0 × 10 2 ; we have systematically studied the mechanism of charge transport across this diode in detail and our results have been confirmed by others . The HOMO is centered on the Fc unit and positioned asymmetrically inside the junction.…”
supporting
confidence: 81%
“…We have reported before molecular diodes based on SAMs of S(CH 2 ) 11 Fc in junctions of the form of Ag‐S(CH 2 ) 11 Fc//GaO x /eutectic alloy of gallium and indium (EGaIn) where “‐,” “//,” and “/” denote a covalent interaction, noncovalent interaction, and the interface between GaO x and EGaIn (Figure ), respectively. These diodes have large rectification ratios of 1.0 × 10 2 ; we have systematically studied the mechanism of charge transport across this diode in detail and our results have been confirmed by others . The HOMO is centered on the Fc unit and positioned asymmetrically inside the junction.…”
supporting
confidence: 81%
“…Previously, we have reported on the mechanism of charge transfer across molecular diodes with SAMs of SC 11 Fc on ultra-flat template-stripped silver-bottom electrodes (Ag TS ; henceforth left electrode) and EGaIn top electrodes (henceforth right electrode; a non-Newtonian liquid-metal alloy of eutectic In and Ga) [17][18][19] , including temperature-dependent J(V) measurements 20 (others have studied the mechanism rectification of SC n Fc SAMs in other types of junctions [21][22][23] ). This so-called 'EGaIn' technique is well established [24][25][26][27] and has been used in a wide range of physical-organic studies 20,[28][29][30][31][32][33] .…”
Section: Resultsmentioning
confidence: 99%
“…3B), and later the molecules are adsorbed to both electrodes simultaneously. [228][229][230][231][232][233][234] The gap or the trench between the two electrodes is often parallel to the substrate and is prepared by advanced lithography, or electromigration. 228,229 The trench can also be vertical (see Fig.…”
Section: Sandwich / Trenchmentioning
confidence: 99%