Ge layer transfer to Si for photovoltaic applications

Zahler, James M.; Ahn, C. C.; Zaghi, Shahrooz; Atwater, Harry A.; Chu, C.; Iles, P. A.

doi:10.1016/s0040-6090(01)01570-x

Cited by 46 publications

(30 citation statements)

References 4 publications

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“…Some voids were presented across the interface due to the presence of particles on the activated surfaces and air trapping at the interfaces during the bonding process. , 35 (2) 3-10 (2011) For practical application, a high bonding strength is required for layer transfer process [16]. The bonding strength of Si/GaAs specimens without annealing and with annealing at 200, 400 and 600 °C was measured by a tensile pulling tester.…”

Section: Resultsmentioning

confidence: 99%

Nanobonding for Multi-Junction Solar Cells at Room Temperature

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Zhang

et al. 2011

ECS Trans.

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Direct nanobonding of p-Si/n-GaAs wafers based on surface activation that uses an Argon (Ar)-fast atom beam at room temperature has been investigated. The bonding strength of the interface was 14.4 MPa at room temperature, and remained nearly constant after annealing up to 600 °C. An amorphous layer with a thickness of 11.5 nm was found across the interface without annealing. After annealing, the electrical current-voltage (I-V) characteristics were improved and the amorphous layer was diminished across the interface. The thermal stability of the interfacial properties of Si/GaAs indicates its potential use on the fabrication of multi-junction solar cells with Si substrate to lower the cost while improving the solar cells' efficiency. The thickness dependence of p-Si/n-Si interfacial I-V characteristics using COMSOL simulation indicates the decrease of breakdown voltage and current with the increase of the junction thickness.

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Section: Resultsmentioning

confidence: 99%

Nanobonding for Multi-Junction Solar Cells at Room Temperature

Howlader

Zhang

et al. 2011

ECS Trans.

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“…Wafer bonding and layer transfer has now been applied to semiconductors other than silicon such as Ge, InP, GaAs, and GaN. [2][3][4][5][6] The mechanism of H-induced exfoliation has been extensively studied in the case of silicon, 7,8 and, more recently, in the case of InP. 9 The early work of Weldon et al provided important conclusions: ͑i͒ implantation induced defects serve to trap H within the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

et al. 2007

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The role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the physical and chemical action of hydrogen in the exfoliation of these materials is presented, in which H-implantation creates damage states that store hydrogen and create nucleation sites for the formation of micro-cracks. These micro-cracks are chemically stabilized by hydrogen passivation, and upon annealing serve as collection points for molecular hydrogen. Upon further heating, the molecular hydrogen trapped in these cracks exerts pressure on the internal surfaces causing the cracks to extend and coalesce. When this process occurs in the presence of a handle substrate that provides rigidity to the thin film, the coalescence of these cracks leads to cooperative thin film exfoliation. In addition to clarifying the mechanism of H-induced exfoliation of single-crystal thin Ge films, the vibrational study helps to identify the states of hydrogen in heavily damaged Ge. Such information has practical importance for the optimization of H-induced layer transfer as a technological tool for materials integration with these materials systems.

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“…Indeed, the use of hydrogen-induced exfoliation of silicon combined with wafer-bonding techniques has been applied to the layer transfer of thin silicon films onto oxidized silicon substrates 2 and is the basis of the industrial production of silicon-oninsulator ͑SOI͒ 3 substrates. Wafer bonding now also involves semiconductors other than silicon such as Ge 4 and GaAs. 5 However, the H-induced exfoliation of III-V semiconductors for layer transfer onto foreign substrates has proven to be more difficult than exfoliation of Si for fabrication of SOI.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

et al. 2005

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The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared ͑FTIR͒ spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.

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Ge layer transfer to Si for photovoltaic applications

Cited by 46 publications

References 4 publications

Nanobonding for Multi-Junction Solar Cells at Room Temperature

Nanobonding for Multi-Junction Solar Cells at Room Temperature

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

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