General-purpose clocked gate driver (CGD) IC with programmable 63-level drivability to reduce Ic overshoot and switching loss of various power transistors

Miyazaki, Kôji; Abe, Seiya; Tsukuda, Mamoru; Omura, Ichiro; Wãda, Keiji; Takamiya, Makoto; Sakurai, Takayasu

doi:10.1109/apec.2016.7468086

Cited by 25 publications

(16 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ability to change the gate drive resistance during operation [42], by using an intelligent programmable gate driver [43,44], could also enable this technique of junction temperature sensing without suffering the penalty of increased switching losses. The devices will be driven at high switching rates (using reduced gate drive resistances) and at the occasional instants when junction temperature sensing becomes necessary, a higher gate resistance is used momentarily for monitoring the temperature dependent switching parameters.…”

Section: Results For Condition Monitoring Implementationmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

104

View full text Add to dashboard Cite

Section: Results For Condition Monitoring Implementationmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

104

View full text Add to dashboard Cite

“…The proposed circuit consists of the protection switch and the active gate controller. The active gate controller provides the variable on-resistance of the protection switch , controlling the gate to source voltage of the switch linearly [12][13][14][15][16]. In this paper, the high frequency buck chopper circuit was applied to the achieve the variable on-resistance for the active gate control.…”

Section: Protection Methodology Using Active Gate Controlledmentioning

confidence: 99%

Fault Tolerant Operation of ISOP Multicell Dc-Dc Converter Using Active Gate Controlled SiC Protection Switch

Hayashi¹,

Matsugaki²,

Ninomiya³

2016

Journal of Engineering

View full text Add to dashboard Cite

An active gate controlled semiconductor protection switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output Parallel) connected multicell dc-dc converter. The SiC-MOSFET with high temperature capability simplifies the configuration of the protection circuit, and its on-resistance control by the active gate controller realizes the smooth protection without the voltage and the current surges. The first laboratory prototype of the protection switch is fabricated by using a SiC-MOSFET with a high frequency buck chopper for the active gate controller. The effectiveness of the proposed protection switch is verified, taking the impact of the volume reduction into account.

show abstract

“…Compared to previously-published work, this SiC active driver arrangement has a higher time resolution and number of drive levels, at the expense of higher complexity and a limited voltage range over which shaping can occur. [15] and [16] present integrated active SiC gate drivers with wide output voltage ranges; however, they are significantly slower. The driver in [15] changes impedance from one switching event to the next, as opposed to during individual switching events.…”

Section: Comparison To Existing Active Gate Driversmentioning

confidence: 99%

“…The driver in [15] changes impedance from one switching event to the next, as opposed to during individual switching events. The driver in [16] has a similar architecture to the active driver used here, but operates at an order-of-magnitude lower internal clock frequency (25 MHz), and is more suited to slower higher-power circuits. It is demonstrated simultaneously improving switching waveforms and reducing losses in a 15-A converter switching 500 V in about 100 ns.…”

Section: Comparison To Existing Active Gate Driversmentioning

confidence: 99%

Multi-level active gate driver for SiC MOSFETs

Dymond

Liu

Wang

et al. 2017

2017 IEEE Energy Conversion Congress and Exposition (ECCE)

View full text Add to dashboard Cite

Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC and GaN devices. This paper introduces a series connection of two commercially available conventional drivers and an improved 5 V, 100 ps resolution active driver. The first conventional driver lifts the gate voltage from the negative hold-off voltage to just below the gate threshold voltage, the active driver performs active high-resolution control around the gate threshold, after which the second conventional driver raises the gate voltage to reach optimal Rdson values. This driver is demonstrated on a 900-V SiC MOSFET that requires a 15 V onstate gate voltage to achieve optimum Rdson. The device is switched at 50 V/ns in a 100-kHz, non-synchronous, 1:10, 300-W boost converter, with the power device switching 600 V and 5 A. It is shown that the gate voltage can be affected on a 100 ps scale, and that meaningful changes to fast power waveforms can be achieved.

show abstract

General-purpose clocked gate driver (CGD) IC with programmable 63-level drivability to reduce Ic overshoot and switching loss of various power transistors

Cited by 25 publications

References 12 publications

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Fault Tolerant Operation of ISOP Multicell Dc-Dc Converter Using Active Gate Controlled SiC Protection Switch

Multi-level active gate driver for SiC MOSFETs

Contact Info

Product

Resources

About