Generalized mobility law for drain current modeling in Si MOS transistors from liquid helium to room temperatures

Emrani, A.; Balestra, F.; Ghibaudo, G.

doi:10.1109/16.199361

Cited by 41 publications

(20 citation statements)

References 8 publications

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“…In light of the observed phenomena of linear relation between the value of [ I~, / (~I D S /~V G S ) ]~ and gate bias (where n is a fitting value), and the bell shape function between surface mobility and gate overdrive (which also observed in our measured result in figure 3), Ghibaudo et al proposed a simple empirical mobility model [9] where p, represents surface mobility (for both electron and hole), p, and 0 are the two fitting parameters. As another approach to develop a simple and yet efficient in computation time consumption, is by Tasch et al.…”

Section: Temperature Dependence Of Surface Mobilitysupporting

confidence: 61%

CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design

Hwang

Lü

1996

J. Phys. IV France

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Abstract. This work presents the low temperature characteristics of commercial complementary-mentaloxide-semiconductor devices, which may be used in the readout electronics of the infrared focal plane array detector. Measurements are performed with the temperature calibration of the device under test. Two most important temperature dependent parameters of the drain current characteristics of the device, the threshold voltage and the carrier mobility are studied. Carrier fteeze out effect is considered in the threshold voltage calculation. Two kinds of empirical carrier mobility model are studied, and better model is included in the SPICE mobility model. A revised SPICE MOS level 3 parameter extraction scheme is proposed to extract new mobility model parameters.

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Section: Temperature Dependence Of Surface Mobilitysupporting

confidence: 61%

CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design

Hwang

Lü

1996

J. Phys. IV France

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“…Physically acceptable values for the empirical exponent n are in the range 2 (300 K) to 3 (4.2 K) [61]. The effective mobility is shown to be [53]:…”

Section: Effective Mobility At Moderate Transverse Electric Fieldmentioning

confidence: 99%

“…Of course, it has been demonstrated that the function represented by eq. (8) is independent of RSD and therefore also the determination of n and VT [53], [61], which is, however, only valid if RSD is indeed independent of VGS-VT. This fact has to be taken into account if the above extraction method is to be used for short-channel LDD MOSFETs.…”

Section: Effective Mobility At Moderate Transverse Electric Fieldmentioning

confidence: 99%

“…As pointed out earlier [53]- [54], the extraction of peff from a linear input curve at cryogenic temperatures requires in fact already an accurate modelling of the device characteristics, in case of the kff dependence on the nom~al field, on T, etc. This implies that most of the extraction methods which have been proposed recently [55]-[S71 are rather complex and require numerical treatment of the measurement data.…”

Section: Effective Mobility At Moderate Transverse Electric Fieldmentioning

confidence: 99%

“…In many cases, they are applicable only in a restricted temperature regime (generally from 77 K on), or to a particular class of devices. An attractive empirical method, applicable in the whole range between 4.2 K and 300 K has been proposed by Ernrani et al [53]-[S41 and has been succesfully applied for the extraction of the electron mobility in inversion and accumulation layers [58], to SO1 MOSFETs [S91 and to n-and p-MOSFETs with nitrided oxide gates [60]. The principle of the extraction method is based on the A L empirical relationship between the function ID/gm and the gate overdrive voltage VGS-VT. For instance, as shown in Fig.…”

Section: Effective Mobility At Moderate Transverse Electric Fieldmentioning

confidence: 99%

See 2 more Smart Citations

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

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Abstract. In this paper, an overview is given of the methods for practical parameter extraction for MOSFETs operated at cryogenic temperatures. The methods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate length is derived. Whenever possible, the physical basis of the mostly semi-empirical methods will be outlined. Finally, pitfalls and problems, related to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.

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Electron and Hole Mobility in Semiconductor Devices

Ghibaudo

Rafhay

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Carrier mobility in a semiconductor is one of the most important parameters for the operation of electronic devices. Actually, the mobility measures the ability of free carriers (electrons or holes) to move in the material as it is subjected to an external electric field. The magnitude of the mobility directly impacts on the device performance since it determines the operation speed through the transit time across the device, the circuit operating frequency, or the sensitivity in magnetic sensors. In this article, the basic aspects of electronic transport in a semiconductor will be addressed, first with a special emphasis on the mobility behavior. Then a brief review of the transport properties for Silicon and GaAs will be presented owing to typical electron and hole mobility data for majority and minority carriers. Finally, some specific mobility results for field effect transistors such as Si MOSFETs, GaAs heterostructure field effect transistors ( HFET ) as well as GaAs and Ge based MOSFETs will be discussed.

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Generalized mobility law for drain current modeling in Si MOS transistors from liquid helium to room temperatures

Cited by 41 publications

References 8 publications

CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design

CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design

Parameter Extraction of MOSFETs Operated at Low Temperature

Electron and Hole Mobility in Semiconductor Devices

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