Generalized Norde plot including determination of the ideality factor

Bohlin, K

doi:10.1063/1.337372

Cited by 198 publications

(80 citation statements)

References 6 publications

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“…Taking into account that for a Schottky diode ~0, n and R are the constants for a given temperature function, (5) can be presented in the common form…”

Section: First Methodsmentioning

confidence: 99%

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Modified methods for the calculation of real Schottky-diode parameters

Громов

Pugachevich

1994

Appl. Phys. A

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Abstract. Two methods are described to determine the Schottky-diode parameters from forward I -V characteristics. The first method includes the presentation of the standard I = f(V) function as V= f(/) and the determination of the factors Co, C1, C2 of this function that provides the calculation of the Schottky-diode ohmic component R, the barrier height ~o and the ideality factor n. The second method is based on a similar application of the special function proposed by Norde. These methods permit the automation of the measurement process. The possible dependence based on the experimental data between Schottky-diode quality and series resistance is shown. PACS: 73.30It is known that the I -V characteristic of a real Schottky diode can be described byif VD >> k T / q andwhere VD is the voltage across the metal-semiconductor interface in the Schottky diode, n is the ideality factor, A is the area of the Schottky diode and fl= q / k T . Since any real Schottky diode has a series resistance R which consists of the conductor elements, semiconductor substrate etc., the value of VD in (1) can be given bywhere V is the experimentally measured voltage in the Schottky-diode circuit and [ R is the voltage across the series resistance of the diode itself.The presence of the ohmic component R causes the appearance of the upper limit in the known voltage interval k T / q << V << I R , which is necessary for the correct application of ~o and n in the standard calculation method. This limit considerably reduces the current measurement area, where the I -V characteristic calculation is admissible, and decreases the accuracy of the calculated data.In [1] Norde proposed a special function for the Schottky-diode series-resistance calculationand it was shown that for an ideal Schottky diode (n = 1) the current value determination in the point corresponding to the minimum of this function permits to calculate the R value.In the case of a real Schottky diode, the problem of parameter determination is complicated in comparison with [1] because of the presence of a third unknown -the ideality factor. Several methods have been proposed for solving this problem in [2][3][4][5]. They are based on the Norde's function and are quite complicated.Three methods have been presented in [6] without using Norde's function for the determination of the series resistance R, ideality factor n and Schottky barrier height (0. Here the problem of Schottky-diode parameter determination is solved by means of the differential conductivity G= dI/dV, which requires the measurement steps as small as possible for the calculation and in this connection very high fidelity of the measurement devices. First methodThe method proposed below uses only (1) and is based on the same assumptions as in [6], However, this method is not critical to the measurement steps and less critical to the measurement device fidelity.For the realization of this method (1) should be presented taking into account (2) and (3) as follow: Equation (5) is said to be correct if the l = f ( V ) d...

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“…Taking into account that for a Schottky diode ~0, n and R are the constants for a given temperature function, (5) can be presented in the common form…”

Section: First Methodsmentioning

confidence: 99%

“…Several methods have been proposed for solving this problem in [2][3][4][5]. They are based on the Norde's function and are quite complicated.…”

Section: Pacs: 7330mentioning

confidence: 99%

Modified methods for the calculation of real Schottky-diode parameters

Громов

Pugachevich

1994

Appl. Phys. A

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“…However, McLean [9] questioned the reliability of the results obtained using Sato and Yasumura's method, arguing that the interfacial properties of the contact (and consequently the basic parameters of the contact) are temperature dependent. Accordingly, Bohlin [10] extended Norde's method by introducing an arbitrary constant r into the F function, i.e.,…”

Section: Introductionmentioning

confidence: 99%

“…The F function methods developed by Norde [6], Sato and Yasumura [8], Bohlin [10], and many others [4,[11][12], were intended only for positive biased contacts. In other words, they are inapplicable to Schottky contacts with a negative current resulting from a reverse bias.…”

Section: Introductionmentioning

confidence: 99%

A generalized Norde plot for reverse biased Schottky contacts

Hsiung¹,

Chou²,

Chiang³

2012

Int J Miner Metall Mater

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When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit (IC) electronics field. The parameters of such contacts can be determined from their current-voltage (I-V) characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate under a reverse bias. Accordingly, the present study proposed a generalized reverse current-voltage (I-V) plot which enables the series resistance, barrier height, and ideality factor of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theoretical derivation of the proposed approach was presented and a series of validation tests were then performed. The results show that the proposed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.

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“…Numerous alternative methods have been proposed over the last few years to circumvent the problem introduced by R s when extracting the desired parameters [2][3][4][5][6][7]. Practically all of the published methods use the construction of some auxiliary functions that allows the separation of the effect of R s .…”

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confidence: 99%

Parameters Extraction of the Au/SnO 2 -Si(n)/Al p-n Junction Solar Cell Using Lambert W Function

Belgacem

El-Amin

2014

Silicon

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The paper present a simple method for the extraction of solar cells parameters with a single diode circuit model from its dark characteristic and considering the series and shunt resistances. In order to extract the four parameters of the solar cell, an optimized technique is presented by using a combination of Lambert W function in its Padé-type approximation and the FindFit function in the Mathematica software package. By using the exact explicit analytical solutions, the current-voltage curves of the Au/SnO 2 -Si(n)/Al p-n junction solar cell are calculated and simulated. The results have the good agreement between the fitted currentvoltage curves and the experimental data of the corresponding solar cell. A closed form expression for the Lambert W function based on a Padé-type approximation is also provided.

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Generalized Norde plot including determination of the ideality factor

Cited by 198 publications

References 6 publications

Modified methods for the calculation of real Schottky-diode parameters

Modified methods for the calculation of real Schottky-diode parameters

A generalized Norde plot for reverse biased Schottky contacts

Parameters Extraction of the Au/SnO 2 -Si(n)/Al p-n Junction Solar Cell Using Lambert W Function

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